Agc Inc.

L'oreal

Shuhei Nomura

Kazutaka Ono

Nobuhiko Takeshita

Yu Hanawa

Keisuke Hanashima

Shigeki Sawamura

Nobutaka Kidera

Shuhei Ogawa

Norihito Nakazawa

Yoshiharu Ooi

Hiroki Hotaka

Yusaku Matsuo

Toshio Nomura

Mariko Nomura

A glass substrate for high-frequency devices includes, in terms of molar percentage based on oxides: one or more alkaline-earth metal oxides in a total amount of 0.1 to 13%; AlOand BOin a total amount of 1 to 40%, in which a molar ratio of the contents represented by AlO/(AlO+BO) is 0 to 0.45; at least one oxide selected from the group consisting of ScO, TiO, ZnO, GaO, GeO, YO, ZrO, NbO, InO, TeO, HfO, TaO, WO, BiO, LaO, GdO, YbO, and LuO, in a total amount of 0.1 to 1.0%; and SiOas a main component. The glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Glass substrate for high frequency device, liquid crystal antenna and high frequency device

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Glass substrate, semiconductor device, and display device

Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}≤300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Glass substrate, liquid crystal antenna and high-frequency device

The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of −40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

Substrate, liquid crystal antenna and high-frequency device

A glass substrate for a high-frequency device, which contains, in terms of mole percent on the basis of oxides: 40 to 75% of SiO; 0 to 15% of AlO; 13 to 23% of BO; 2.5 to 11% of MgO; and 0 to 13% of CaO, and having a total content of alkali metal oxides in the range of 0.001-5%, where at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Glass substrate for high-frequency device and circuit board for high-frequency device

A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a ceramic member provided on or above the bonding layer, the ceramic member being constituted by an SiC member or an AlN member.

Laminated member

A laminated member includes a glass member of which a linear transmittance at a wavelength of 850 nm is 80% or more, a bonding layer provided on or above the glass member, the bonding layer being constituted by a resin, and a Si—SiC member provided on or above the bonding layer.

The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 &#x3bc;m to 300 &#x3bc;m, and an inclination angle due to the warpage of 0.0004&#xb0; to 0.12&#xb0;.

Glass substrate and laminated substrate

A glass substrate for a high-frequency device, which contains SiOas a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by NaO/(NaO+KO) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)&#xd7;average thermal expansion coefficient (ppm/&#xb0; C.) at 50-350&#xb0; C.}&#x2264;300 (GPa&#xb7;ppm/&#xb0; C.), wherein the relative dielectric constant at 20&#xb0; C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20&#xb0; C. and 35 GHz does not exceed 0.006.

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |&#x394;&#x3b1;| of a difference between an average coefficient of thermal expansion &#x3b1;of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50&#xb0; C. to 100&#xb0; C., an absolute value |&#x394;&#x3b1;| of a difference between an average coefficient of thermal expansion &#x3b1;of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100&#xb0; C. to 200&#xb0; C., and an absolute value |&#x394;&#x3b1;| of a difference between an average coefficient of thermal expansion &#x3b1;of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200&#xb0; C. to 300&#xb0; C. are 0.16 ppm/&#xb0; C. or less.

An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of AlO, 8.0% or more of BO, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion &#x3b1;at 100 to 200&#xb0; C. of from 3.10 ppm/&#xb0; C. to 3.70 ppm/&#xb0; C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cmor more.

Alkali-free glass substrate, laminated substrate, and method for manufacturing glass substrate

An alkali-free glass substrate which is a glass substrate includes, as represented by molar percentage based on oxides, 0.1% to 10% of ZnO. The alkali-free glass substrate has an average coefficient of thermal expansion &#x3b1;at 50 to 100&#xb0; C. of from 2.70 ppm/&#xb0; C. to 3.20 ppm/&#xb0; C., an average coefficient of thermal expansion &#x3b1;at 200 to 300&#xb0; C. of from 3.45 ppm/&#xb0; C. to 3.95 ppm/&#xb0; C., and a value &#x3b1;/&#x3b1;obtained by dividing the average coefficient of thermal expansion &#x3b1;at 200 to 300&#xb0; C. by the average coefficient of thermal expansion &#x3b1;at 50 to 100&#xb0; C. of from 1.20 to 1.30.

Alkali-free glass substrate, laminated substrate, and glass substrate production method

A glass substrate is laminated with a substrate containing silicon to thereby form a laminated substrate. The glass substrate has a concave surface and a convex surface and has one or more marks that distinguish between the concave surface and the convex surface.

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Tokyo, Japan

Shuhei Nomura