Ngk Insulators, Inc.

Toyoda Gosei Co., Ltd.

Osaka University

Other

Shuhei Higashihara

Makoto Iwai

Katsuhiro Imai

Takayuki Hirao

Fumio Kawamura

Takatomo Sasaki

Yusuke Mori

Takanao Shimodaira

Jungo Kondo

Yasuo Kitaoka

Keiichiro Asai

Seiji Nagai

Masahiro Sakai

Koji Hirata

Takayuki Sato

Shiro Yamazaki

Shoichiro Yamaguchi

Tetsuya Ejiri

Yuichi Iwata

Masashi Goto

Shiro Yamasaki

Naotake Okada

Tetsuya Uchikawa

Akira Hamajima

Suguru Noguchi

Kentaro Tani

Naoki Fujita

Makota Iwai

Naoya Miyoshi

Ayumi Saito

A waveguide device includes: a photonic crystal layer having holes periodically formed in an electro-optical crystal substrate; a line-defect optical waveguide formed in the photonic crystal layer; a first electrode arranged above the electro-optical crystal substrate, the first electrode being transparent to light; and a second electrode arranged below the electro-optical crystal substrate. Each of an optical scanning device and an optical modulation device includes the above-mentioned waveguide device.

Waveguide device, optical scanning device and optical modulation device

It is provided a bonded substrate of a support substrate and group-13 nitride crystal substrate. The group-13 nitride crystal substrate comprises one or more transition metal elements selected from the group consisting of zinc, iron, manganese, nickel and chromium in a concentration of 1×10atoms·cmor higher and 1×10atoms·cmor lower.

Bonded substrate composed of support substrate and group-13 element nitride crystal substrate

A phosphor element comprises: a support substrate; an optical waveguide for propagating an excitation light through the waveguide, the optical waveguide comprising a phosphor generating a fluorescence, and the optical waveguide comprising an emission side end surface emitting the excitation light and the fluorescence, an opposing end surface opposing the emission side end surface, a bottom surface, a top surface opposing the bottom surface and a pair of side surfaces; a bottom surface side clad layer covering the bottom surface of the optical waveguide; a top surface side clad layer covering the top surface of the optical waveguide; side surface side clad layers covering the side surfaces of the optical waveguide, respectively; a top surface side reflection film covering the top surface side clad layer; side surface side reflection films covering the side surface side clad layers, respectively; and a bottom surface side reflection film provided between the support substrate and the bottom surface side clad layer.

Phosphor element and illumination device

A group 13 element source, a flux comprising at least one of an alkali metal and an alkaline earth metal, and an additive being liquid at an ambient temperature are placed in a crystal growing vessel. The crystal growing vessel is heated and pressurized under a nitrogen atom-containing gas atmosphere to form a melt containing the group 13 element source, the flux and the additive. Evaporation of the additive is prevented until the flux is melted. The crystal of the nitride of the group 13 element is then grown in the melt.

Method and device for producing a group 13 element nitride crystal using a shielding object

It is produced a crystal of a nitride of a group 13 element in a melt including the group 13 element and a flux including at least an alkali metal under atmosphere comprising a nitrogen-containing gas. An amount of carbon is made 0.005 to 0.018 atomic percent, provided that 100 atomic percent is assigned to a total amount of said flux, said group 13 element and carbon in said melt.

Method for producing nitride of group-13 element, and melt composition

It is used a crucible containing a flux and a source material, a reaction vessel containing the crucible, an intermediate vessel containing the reaction vessel, and a pressure vessel containing the intermediate vessel and used to fill a gas comprising at least a nitrogen atom. When the flux and the source material are melted by heating to grow the nitride crystal, a vapor of an organic compound is provided in a space outside of the reaction vessel and inside of the intermediate vessel.

Method for producing nitride crystal

A gallium nitride layer is produced using a seed crystal substrate by flux method. The seed crystal substrateA includes a supporting body, a plurality of seed crystal layersA each comprising gallium nitride single crystal and separated from one another, a low temperature buffer layerprovided between the seed crystal layersA and the supporting body and made of a nitride of a group III metal element, and an exposed layerexposed to spaces between the adjacent seed crystal layersA and made of aluminum nitride single crystal or aluminum gallium nitride single crystal. The gallium nitride layer is grown on the seed crystal layers by flux method.

Method for producing gallium nitride layer and seed crystal substrate used in same

Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

Method for growing single crystal of group III metal nitride and reaction vessel for use in same

An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.

Method for producing group III nitride semiconductor

In a method of growing a single crystal by melting a raw material within a vessel under a nitrogenous and non-oxidizing atmosphere, the vessel is oscillated and the melted raw material is contacted with an agitation medium made of a solid unreactive with the melted raw material.

Single crystal growing method

A nitride single crystal is produced using a growth solution containing an easily oxidizable material. A crucible for storing the growth solution, a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen, and an oxygen absorber disposed inside the pressure vessel and outside the crucible are used to grow the nitride single crystal.

Process and apparatus for producing nitride single crystal

An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100&#xb0; C. to 200&#xb0; C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

Growing community of inventors

Nagoya, Japan

Shuhei Higashihara