The South China University of Technology

Shuguang Zhang

Guoqiang Li

Fangliang Gao

Lei Wen

Jingling Li

Yunfang Guan

Disclosed is a preparation method for a GaAs thin film grown on an Si substrate, said method comprising the following steps: (1) Si (111) substrate cleaning; (2) Si (111) substrate preprocessing; (3) Si (111) substrate oxide film removal; (4) first InGaAs buffer layer growth; (5) first InGaAs buffer layer in situ annealing; (6) GaAs buffer layer growth; (7) GaAs buffer layer in situ annealing; (8) second InGaAs buffer layer growth; (9) second InGaAs buffer layer in situ annealing; (10) GaAs epitaxial thin film growth. Also disclosed is a GaAs thin film grown on an Si substrate. The GaAs thin film obtained by the present invention has a good crystal quality, an even surface, and a positive promotional significance with regard to the preparation of semiconductor devices, particularly in the field of solar cells.

GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate

The present invention discloses an InGaAs film grown on a Si substrate, which comprises a Si substrate, a low temperature InGaAs buffer layer, a high temperature InGaAs buffer layer and an InGaAs epitaxial film, arranged sequentially, wherein the low temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 350&#x2dc;380&#xb0; C.; the high temperature InGaAs buffer layer is an InGaAs buffer layer grown at the temperature of 500&#x2dc;540&#xb0; C., and the sum of the thickness of the low temperature InGaAs buffer layer and the thickness of the high temperature InGaAs buffer layer is 10&#x2dc;20 nm. The invention further discloses a method for preparing the InGaAs film. The InGaAs film grown on the Si substrate of the present invention has good crystal quality, is almost completely relaxed, and has a simple preparation process.

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Guangzhou, China

Shuguang Zhang