Sumitomo Electric Industries, Limited

Shugo Minobe

Yusuke Yoshizumi

Keiji Ishibashi

Yoshiaki Hagi

Hideki Osada

A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2&#xd7;10to 4&#xd7;10cm, and has an average dislocation density of 1000 to 5&#xd7;10cmin any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.

Gallium nitride crystal substrate

A group III nitride crystal substrate is provided, wherein, a uniform distortion at a surface layer of the crystal substrate is equal to or lower than 1.7&#xd7;10, and wherein a plane orientation of the main surface has an inclination angle equal to or greater than &#x2212;10&#xb0; and equal to or smaller than 10&#xb0; in a [0001] direction with respect to a plane including a c axis of the crystal substrate. A group III nitride crystal substrate suitable for manufacturing a light emitting device with a blue shift of an emission suppressed, an epilayer-containing group III nitride crystal substrate, a semiconductor device and a method of manufacturing the same can thereby be provided.

Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same

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Hyogo, Japan

Shugo Minobe