Hamamatsu-photonics K.k.

Shucheng Chu

Hirofumi Kan

Takashi Suzuki

Fumitsugu Fukuyo

Koji Kawai

Yoshinori Honda

Takeaki Hattori

Norio Ichikawa

Hiroyuki Taketomi

Yuji Kasamatsu

An ultraviolet light generating targetincludes a substratemade of sapphire, quartz, or rock crystal; and a light-emitting layerthat is provided on the substrateand that generates ultraviolet light upon receiving an electron beam. The light-emitting layerincludes powdered or granular Pr:LuAG crystals. By using such a light-emitting layeras the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target

An ultraviolet light generating targetincludes a substratemade of sapphire, quartz or rock crystal; and a Pr:LuAG polycrystalline film, provided on the substrate, that generates ultraviolet light upon receiving an electron beam. By using a Pr:LuAG polycrystal as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

A silicon light-emitting element includes a first conductivity type silicon substratehaving a first surfaceand a second surfaceon a side opposite to the first surface, an insulating filmprovided on the first surfaceof the silicon substrate, a silicon layerprovided on the insulating film, and having a second conductivity type different from the first conductivity type, a first electrodeprovided on the silicon layer, and a second electrodeprovided on the second surface of the silicon substrate, and the silicon substratehas a carrier concentration of 5&#xd7;10cmto 5&#xd7;10cm, the silicon layer 12 has a carrier concentration of 1&#xd7;10cmto 5&#xd7;10cm, and that is larger by one digit or more than the carrier concentration of the silicon substrate, and the insulating filmhas a film thickness of 0.3 nm to 5 nm. Accordingly, a silicon light-emitting element that is applicable to a silicon photonics light source is realized.

Silicon light-emitting element

A semiconductor is provided with: a silicon substrateof a first conductivity type, including a first surface Sand a second surface S; a silicon layerof a second conductivity type, arranged on the first surface Sof the silicon substrate, including a third surface Sopposite a junction surface with the silicon substrate; a first electrodearranged on the second surface S; a second electrodearranged on the third surface S; and an argon added areaformed in a semiconductor area formed of the silicon substrateand the silicon layer. The argon added areaincludes an area indicating an argon concentration of a minimum of 1&#xd7;10cmand a maximum of 2&#xd7;10cm.

Semiconductor device

A method for manufacturing a silicon device includes steps of: forming a silicon layerthat indicates a second conductivity type on a first surface Sof a silicon substratethat indicates a first conductivity type; and exposing, after the step, a third surface Sof the silicon layerfor a period of a minimum of 30 minutes and a maximum of 6 hours to an argon-containing atmosphere which is adjusted to temperatures of a minimum of 400&#xb0; C. and a maximum of 900&#xb0; C. and pressures of a minimum of 4 MPa and a maximum of 200 MPa.

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Hamamatsu, Japan

Shucheng Chu