Applied Materials, Inc.

Shubham Chowdhuri

Deenesh Padhi

Kang Sub Yim

Abhijit Ashok Kangude

Shaunak Mukherjee

Rahul Rajeev

Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

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Sunnyvale, CA, United States of America

Shubham Chowdhuri