Raymx Microelectronics Corp.

Shuangxi Chen

Yufeng Zhou

Cheng Zheng

The present disclosure provides a redundancy method for a flash memory device. The flash memory device comprises multiple storage areas in which at least one storage area is configured as a temporary storage area for redundant operations. The method comprises: performing redundant operations to a first set of pages stored in one of the plurality of storage areas in a cache to generate an intermediate result; storing the intermediate result to the storage area of the at least one temporary storage area for redundant operation from the cache; performing redundant operations to the (m+1)th set of pages stored in one storage area the redundant operation result of and the first set of pages stored in the at least one temporary storage area for redundant operation to produce a final result in the cache; storing the final result to the corresponding pages in the (m+1)th set of pages from the cache.

Memory device and redundancy method applied thereto

A method for adaptively identifying flash memory type includes driving a flash memory interface according to a predetermined configuration and a predetermined protocol of the flash memory interface to send a reading command to a flash memory module to obtain a flash memory identity by successfully reading the flash memory module; changing at least one of the configuration and the interface protocol of the flash memory interface then performing the obtaining the flash memory identity again until all preset adjustments have been tried; and storing the obtained flash memory identity and a firmware corresponding to the obtained flash memory identity to a designated address of a non-volatile memory when the flash memory module is successful read. The above automated method can solve the disadvantages of high cost and low manufacturing flexibility caused by conventional manual identification and re-burning of eFuses.

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Shuangxi Chen