Micron Technology Incorporated

Lodestar Licensing Group LLC

Loestar Licensing Group LLC

Shuangqiang Luo

Indra V Chary

Lifang Xu

Justin B Dorhout

John David Hopkins

Nancy M Lomeli

Xiao Li

Harsh Narendrakumar Jain

Rita J Klein

Jordan D Greenlee

Alyssa N Scarbrough

Xuan Li

Adeline Yii

Rui Zhang

Roger W Lindsay

Brett D Lowe

Jiewei Chen

Lingyu Kong

Sok Han Wong

Pei Qiong Cheung

Dong Wang

Da Xing

Xiao Zeng

Allen McTeer

John Mark Meldrim

Everett Allen McTeer

Anilkumar Chandolu

Scott L Light

Christopher J Larsen

Silvia Borsari

Jivaan Kishore Jhothiraman

Sidhartha Gupta

S M Istiaque Hossain

Shen Hu

Shruthi Kumara Vadivel

Kar Wui Thong

Naiming Liu

Chieh Hsien Quek

Anurag Jindal

Jing Wai Fong

Song Kai Tan

Mohadeseh Asadolahi Baboli

Shicong Wang

A microelectronic device comprises a stack structure comprising insulative structures vertically interleaved with conductive structures, first support pillar structures vertically extending through the stack structure in a first staircase region including steps defined at edges of tiers of the insulative structures and conductive structures, and second support pillar structures vertically extending through the stack structure in a second staircase region including additional steps defined at edges of additional tiers of the insulative structures and conductive structures, the second support pillar structures having a smaller cross-sectional area than the first support pillar structures. Related memory devices, electronic systems, and methods are also described.

Methods of forming microelectronic devices including differently sized conductive contact structures

Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes tiers located one over another, the tiers including respective memory cells and control gates for the memory cells; a first pillar extending through the tiers and separated from the control gates, the first pillar including a first dielectric liner portion and a first core portion adjacent the first dielectric liner portion, the first dielectric liner portion and the first core portion extending along a length of the first pillar; and a second pillar extending through the tiers and separated from the control gates, the second pillar including a second dielectric liner portion and a second core portion adjacent the second dielectric liner portion, the second dielectric portion and the second core portion extending along a length of the second pillar, wherein the first core portion and the second core portion have different materials.

Memory device including support structures and contact structures having different materials

A microelectronic device includes a stack structure, slot structures, and dielectric material. The stack structure includes blocks each including a vertically alternating sequence of conductive material and insulative material arranged in tiers. At least one of the blocks includes an array region including strings of memory cells, and a staircase region including a crest sub-region interposed between a staircase structure and the array region. An uppermost boundary of the tiers within the crest sub-region underlies an uppermost boundary of the tiers within the array region. The slot structures are interposed between the blocks of the stack structure. The dielectric material extends over and between the blocks of the stack structure. A thickness of a portion of the dielectric material overlying the crest sub-region is greater than a thickness of an additional portion of the dielectric material overlying the array region. Related memory devices, electronic systems, and methods are also described.

Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

A microelectronic device comprises a stack structure comprising alternating conductive structures and insulative structures arranged in tiers, the tiers individually comprising one of the conductive structures and one of the insulative structures, first support pillar structures extending through the stack structure within a first region of the microelectronic device, the first support pillar structures electrically isolated from a source structure underlying the stack structure, second support pillar structures extending through the stack structure within a second region of the microelectronic device, the second support pillar structures comprising an electrically conductive material in electrical communication with the source structure, and bridge structures extending between at least some neighboring first support pillar structures of the first support pillar structures. Related memory devices, electronic systems, and methods are also described.

Microelectronic devices and memory devices including support pillars

Microelectronic devices include a tiered stack including a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A stadium within the tiered stack includes a staircase with steps at ends of some of the tiers. The steps each have a tread provided by an upper surface portion of one of the conductive structures. Conductive contact structures extend to one of the steps and include a first conductive contact structure terminating at the tread of the step and a second conductive contact structure extending through the tread of the step. Related fabrication methods and electronic systems are also disclosed.

Microelectronic devices with staircased stadiums and both through-step and to-step contacts, and related systems and methods

Methods, systems, and devices for support structures for three dimensional memory arrays are described. For example, a portion of a memory die may formed at least in part from a stack of material layers deposited over a substrate, and the memory die may include a set of access lines in a staircase arrangement over the stack. At least a portion of the stack of material layers between the staircase arrangement and the substrate may be configured to be continuous, or uninterrupted, which may result in fewer physical discontinuities in the stack of material layers below the staircase arrangement. In some examples, at least a portion of the stack of material layers (e.g., conductive portions) in such a region may be electrically isolated from other portions of the memory die, which may support aspects of structural support while limiting electrical interaction with the other portions of the memory die.

Support structures for three dimensional memory arrays

Methods, systems, and devices for divider and contact formation for memory cells are described. In some examples, a protective mask (e.g., a photoresist layer) may be formed over existing circuit structures above a substrate. Contact structures may be exposed when the protective mask is removed. In some examples, the protective mask may be removed using a dry etching operation. In some examples, one or more additional etching operations may be performed to expose (and subsequently fabricate) additional circuit structures.

Divider and contact formation for memory cells

A microelectronic device comprises a stack structure, a stadium structure within the stack structure, a source tier underlying the stack structure, and a masking structure. The stack structure has tiers each comprising a conductive structure and an insulating structure. The stadium structure comprises a forward staircase structure, a reverse staircase structure, and a central region horizontally interposed between the forward staircase structure and the reverse staircase structure. The source tier comprises discrete conductive structures within horizontal boundaries of the central region of the stadium structure and horizontally separated from one another by dielectric material. The masking structure is confined within the horizontal boundaries of the central region of the stadium structure and is vertically interposed between the source tier and the stack structure. The masking structure comprises segments horizontally covering portions of the dielectric material horizontally interposed between the discrete conductive structures. Additional devices and electronic systems are also described.

Microelectronic devices including staircase structures

A microelectronic device comprises a stack structure, contact structures, and additional contact structures. The stack structure comprises a vertically alternating sequence of conductive material and insulative material arranged in tiers. The stack structure is divided into blocks each comprising a stadium structure including steps comprising horizontal ends of the tiers. The contact structures are within a horizontal area of the stadium structure and vertically extend through the stack structure. The additional contact structures are on at least some of the steps of the stadium structure and are coupled to the contact structures. Memory devices and electronic devices are also disclosed.

Microelectronic devices, and related electronic systems and methods

A microelectronic device comprises pillar structures comprising semiconductive material, contact structures in physical contact with upper portions of the pillar structures, and conductive structures over and in physical contact with the contact structures. Each of the conductive structures comprises an upper portion having a first width, and a lower portion vertically interposed between the upper portion and the contact structures. The lower portion has a tapered profile defining additional widths varying from a second width less than the first width at an uppermost boundary of the lower portion to a third width less than the second width at a lowermost boundary of the lower portion. Memory devices, electronic systems, and methods of forming microelectronic devices are also described.

Microelectronic devices, memory devices, and electronic systems

A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Strings of memory cells comprise channel-material strings that extend through the insulative tiers and the conductive tiers in the memory blocks. A through-array-via (TAV) region comprises TAV constructions that extend through the insulative tiers and the conductive tiers. The TAV constructions individually comprise a radially-outer insulative lining and a conductive core radially-inward of the insulative lining. The insulative lining comprises a radially-inner insulative material and a radially-outer insulative material that are of different compositions relative one another. The radially-outer insulative material is in radially-outer recesses that are in the first tiers as compared to the second tiers. The radially-inner insulative material extends elevationally along the insulative tiers and the conductive tiers. Other embodiments, including method, are disclosed.

Memory arrays comprising strings of memory cells and methods used in forming a memory array comprising strings of memory cells

A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers having channel-material strings therein. Conductive vias are formed through insulating material that is directly above the channel-material strings. Individual of the conductive vias are directly electrically coupled to individual of the channel-material strings. After forming the conductive vias, horizontally-elongated trenches are formed into the stack to form laterally-spaced memory-block regions. Intervening material is formed in the trenches laterally-between and longitudinally-along the immediately-laterally-adjacent memory-block regions. Additional methods and structures independent of method are disclosed.

Memory arrays and methods used in forming a memory array

Integrated circuitry comprises vertical conductive vias individually having a lower portion thereof that is directly against conductor material of islands. The islands comprise multiple different composition materials directly above the conductor material. Apart from the conductive vias, the islands individually comprise at least one of (a), (b), or (c), where: (a): a top material that is of different composition from all material that is vertically between the top material and the conductor material; (b): the top material having its top surface in a vertical cross-section extending laterally-outward beyond two opposing laterally-outermost edges of a top surface of the material that is immediately directly below the top material; and (c): is of different composition from that of an upper portion of the conductor material and including a portion thereof that is elevationally coincident with the conductor material or that is directly against the conductor material. Other embodiments, including methods, are disclosed.

Integrated circuitry, a memory array comprising strings of memory cells, a method used in forming a conductive via, a method used in forming a memory array comprising strings of memory cells

A microelectronic device, including a stack structure including alternating conductive structures and dielectric structures is disclosed. Memory pillars extend through the stack structure. Contacts are laterally adjacent to the memory pillars and extending through the stack structure. The contacts including active contacts and support contacts. The active contacts including a liner and a conductive material. The support contacts including the liner and a dielectric material. The conductive material of the active contacts is in electrical communication with the memory pillars. Methods and electronic systems are also disclosed.

Microelectronic devices including active contacts and support contacts, and related electronic systems and methods

A method of forming a microelectronic device comprises forming a microelectronic device structure. The microelectronic device structure comprises a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures, a dielectric structure vertically extending partially through the stack structure, and a dielectric material vertically overlying and horizontally extending across the stack structure and the dielectric structure. Portions of at least the dielectric material and the dielectric structure are removed to form a trench vertically overlying and at least partially horizontally overlapping a remaining portion of the dielectric structure. The trench is substantially filled with additional dielectric material. Microelectronic devices, memory devices, and electronic systems are also described.

Microelectronic devices and related memory devices

Growing community of inventors

Boise, ID, United States of America

Shuangqiang Luo