Marvell Asia Pte., Ltd.

Globalfoundries U.S. Inc.

Shuangdi Zhao

Wei Zhao

Xiaoli Hu

Igor Arsovski

George Maria Braceras

Qing Li

Xiaoxiao Li

Xueqiang Dai

Hao Pu

Yuzheng Jin

Xi Cao

The present disclosure relates to integrated circuits, and more particularly, to a sense amplifier circuit for current sensing in a memory structure and methods of manufacture and operation. In particular, the present disclosure relates to a circuit including: a sensing circuit including a first set of transistors, at least one data cell circuit, and a reference cell circuit; a reference voltage holding circuit comprising a second set of transistors and a bitline capacitor; and a comparator differential circuit which receives a data sensing voltage signal from the sensing circuit and a reference voltage level from the reference voltage holding circuit and outputs an output signal.

Sense amplifier circuit for current sensing

A structure includes a multi-port memory including a multiple transistor bitcell single ended read port and a write port, a read circuit which is connected to a multiple transistor bitcell circuit and is also configured to evaluate the multiple transistor bitcell single ended read port, and a timer circuit for the single ended read port and which is configured to generate two successive read pulses in one clock cycle for the multi-port memory.

Multi-port high performance memory

Growing community of inventors

Shanghai, China

Shuangdi Zhao