Entegris, Inc.

Shuang Meng

Thomas H Baum

Bryan Clark Hendrix

Philip S H Chen

Richard Ulrich Assion

Robert Wright, Jr

Robert L Wright

Described are vapor deposition methods for depositing molybdenum materials onto a substrate by the use of bis(alkyl-arene) molybdenum, also referred to herein as (alkyl-arene)Mo, for example bis(ethyl-benzene) molybdenum ((EtBz)Mo), as a precursor for such deposition, as well as structures that contain the deposited material.

Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor

A method of forming a molybdenum-containing material on a substrate is described, in which the substrate is contacted with molybdenum oxytetrachloride (MoOCl) vapor under vapor deposition conditions, to deposit the molybdenum-containing material on the substrate. In various implementations, a diborane contact of the substrate may be employed to establish favorable nucleation conditions for the subsequent bulk deposition of molybdenum, e.g., by chemical vapor deposition (CVD) techniques such as pulsed CVD.

CVD Mo deposition by using MoOCl

The disclosure relates to a method of making molybdenum films utilizing boron and molybdenum nucleation layers. The resulting molybdenum films have low electrical resistivity, are substantially free of boron, and can be made at reduced temperatures compared to conventional chemical vapor deposition processes that do not use the boron or molybdenum nucleation layers. The molybdenum nucleation layer formed by this process can protect the substrate from the etching effect of MoClor MoOCl, facilitates nucleation of subsequent CVD Mo growth on top of the molybdenum nucleation layer, and enables Mo CVD deposition at lower temperatures. The nucleation layer can also be used to control the grain sizes of the subsequent CVD Mo growth, and therefore controls the electrical resistivity of the Mo film.

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Danbury, CT, United States of America

Shuang Meng