Applied Materials, Inc.

Shuang Liu

Anton Baryshnikov

Venkatanarayana Shankaramurthy

Mitesh Sanghvi

Brett Berens

Ganesh Balasubramanian

Deenesh Padhi

Visweswaren Sivaramakrishnan

Bok Hoen Kim

Amit Kumar Bansal

Hichem M'Saad

Karthik Janakiraman

Amir Hamed Al-Bayati

Derek R Witty

Martin Jay Seamons

Mohamad A Ayoub

Sudha S Rathi

Eller Y Juco

Chiu Chan

Hyung-Joon Kim

A method includes identifying a recipe for depositing layers on a substrate in a processing chamber of a substrate processing system. The recipe comprises iterations of a set of one or more processes, and wherein each iteration of the iterations is for depositing at least one layer of the layers. The method further includes determining changes to parameters for depositing the at least one layer on the substrate. Each of the changes corresponds to a respective iteration of the iterations and is associated with a relative position of a corresponding layer. The layers are to be deposited on one or more substrates based on the recipe and the changes.

Variable loop control feature

A method includes identifying a recipe for depositing a plurality of layers on a substrate in a processing chamber of a substrate processing system. The recipe includes iterations of a set of processes. Each iteration is for depositing at least one layer. The method further includes determining iteration adjustments to cause uniformity of the layers. Each iteration adjustment corresponds to a respective iteration. The method further includes determining multipliers to cause an adjustment in thickness of one or more layers of the layers. Each multiplier of the multipliers corresponds to a corresponding iteration. The method further includes storing the iteration adjustments and the multipliers as stored iteration adjustments and stored multipliers. The layers are deposited on substrates based on the recipe and the stored iteration adjustments and the stored multipliers.

The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.

Apparatus and method for substrate clamping in a plasma chamber

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Saratoga, CA, United States of America

Shuang Liu