Sun Yat-senuniversity

Guangzhou China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shuaichen Si

Jing Wang

Jinbo Yu

Yu Wei Chen

Bo Liu

Fen Long

Xuejie Zhang

Luyu Cao

Weijiang Gan

Dexuan Huang

Bichan Zhao

Lu Yang

Qiongyun Liang

A copper ion-doped polychromatic fluorescent glass and a preparation method and use thereof are provided. The fluorescent glass has a chemical formula shown as the following: aPO-bSiO-cZnO-dCsCO-eNaCl-fCuCl, wherein a, b, c, d, e, and f in the formula represent the molar coefficients of compounds, wherein a is 45 to 65, b is 10 to 30, c is 1 to 5, d is 5 to 20, e is 5 to 20, f is 0.1 to 5. The fluorescent can achieve blue, orange and near-infrared photoluminescence under the UV light with higher fluorescent quantum yield.

Copper ion-doped polychromatic fluorescent glass and preparation method and use thereof

Embodiments of the present disclosure are directed to a pixel structure, an array substrate, and a display panel. The pixel structure comprises a plurality of gate lines arranged horizontally parallel and a plurality of data lines arranged vertically parallel, with the gate lines and the data lines vertically intersecting to form a plurality of sub pixel areas. The present disclosure improves the uniformity of the display panel image by adding new electrode lines and arranging them parallel to the fewer data lines in the pixel structure while ensuring the pixel opening rate.

Tri-gate pixel structure, array substrate, and display panel

An array substrate and a display panel including a plurality of pixels, a plurality of scan line groups and a plurality of data lines, each of the pixels includes at least three sub-pixels, each of the scan line group includes three sub-scan lines, one of the scan line groups is provided between adjacent two of the pixel rows, and at least two of the sub-pixels in each of the pixels are connected to different two of the sub-scan lines in the one of the scan line groups, one of the pixel columns is provided between adjacent two of the data lines, and at least two of the sub-pixels in each of the pixels are connected to a same one of the data lines.

Array substrates and display panels

The present invention relates to a divalent manganese-doped all-inorganic perovskite quantum dot glass, and constituents of the divalent manganese-doped all-inorganic perovskite quantum dot glass are as follows: BO: 25%-45%, SiO: 25%-45%, MCO: 1%-10%, AlO: 1%-10%, ZnO: 1%-5%, CsCO: 1%-10%, PbCl: 1%-10%, NaCl: 1%-10%, MnCl: 1%-10%, wherein M is Ca, Sr or Ba. Preparation of the quantum dot glass is as follows: grinding each raw constituent materials and mixing well to form a mixture, melting the mixture, followed by molding, annealing and performing thermal treatment. By the thermal treatment at different temperatures, a divalent manganese-doped quantum dot glass can be obtained. The divalent manganese ions doped perovskite quantum dot glass is a kind of light-emitting material with great application prospect, for possessing good stability and rather high fluorescence quantum yield.

Divalent manganese-doped all-inorganic perovskite quantum dot glass and preparation method thereof

The present invention discloses a glass ceramic for excitation of high-power semiconductor light source. An expression of constitution of the glass ceramic is (1&#x2212;x)A: xB, wherein x as a weight percentage of B, is ranging from 1% to 30%; A as a precursor glass, has a composition of aSbO-bBO-cZnO-dMO, a, b, c, d being molar percentages, a+b+c+d=100%, M among MO represents an alkali metal, and MO is an alkali metallic oxide or an alkali metallic carbonate; and B is a YAG:Cefluorescent powder. The precursor glass provided by the present invention has a relatively low remelting temperature, without devitrification during the process of preparing the final products or absorption of blue light. The product glass ceramic has a luminous efficiency of 300 lm/W to 400 lm/W. A white light semiconductor light source is prepared by the product glass ceramic in combination with the high-power blue light semiconductor light source. A preparation method provided by the present invention has advantages such as low cost, excellent performances, and being green, pollution-free and suitable for the large-scale industrial production. The present invention can be applied in the field of illumination light source and display light source, such as head-lights of vehicles, searchlights, projectors and laser cinemas.

Glass ceramic for excitation of high-power semiconductor light source and preparation method and use thereof

Growing community of inventors

Guangdong, China

Shuaichen Si