Csi Cells Co., Ltd.

Csi Solar Power Group Co., Ltd.

Shuai Zou

Xusheng Wang

Guoqiang Xing

Fang Cao

Weixu Long

Xiaoya Ye

The present disclosure relates to a method for preparing nano-textured surface on single side of a silicon wafer, including the following steps: (1) superimposing two silicon wafers to obtain a first silicon wafer superimposition structure; the side on which the silicon wafers is superimposed is recorded as an attached surface, and the side exposed outside is recorded as an exposed surface; and (2) performing nano-textured surface etching on the first silicon wafer superimposition structure; and providing each silicon wafer with nano-textured surface on the exposed surface and a nano-textured surface etched strip on the edge of the attached surface. In the present disclosure, while the nano-textured surface etching is performed, the edge of the attached surface is etched with nano-textured surface by selecting a specific etching rate, which reduces the pulling force for detaching the wafers and reduces the fragmentation rate during the detaching process.

Texturization method of silicon wafers, product obtained therefrom and preparation method of solar cells

A method for producing a textured structure of a crystalline silicon solar cell is provided, including the following steps: (1) forming a porous layer structure on a surface of a silicon wafer; (2) then cleaning with a first alkaline chemical solution; (3) removing residual metal particles with a cleaning solution; (4) and then etching the surface with a first chemical etching solution to obtain the textured structure of the crystalline silicon solar cell. The method greatly prolongs the lifetime of the mixed solution of hydrofluoric acid and nitric acid and ensures the stability and uniformity of the textured structure.

Method for producing a textured structure of a crystalline silicon solar cell

A process for preparing a passivated emitter rear contact solar cell, which includes the steps as follows: removing the damaged layer on the surface of the silicon wafer and at the same time polishing both surfaces, texturing, forming PN junction, etching, removing the glass impurity, depositing a passivation film on the back surface, depositing a passivating antireflective layer on the front surface, making local openings on the back surface, screen printing of metal paste on both the front surface and the back surface and sintering, in which the texturing step employs a catalytic metal etching approach, and the textured structure is a nanometer-level textured structure. The present invention has combined removing the damaged layer on the surface of the silicon wafer and polishing both the front and back surfaces into one single step, and thus has simplified the production process and reduced the production cost.

Growing community of inventors

Suzhou, China

Shuai Zou