Inventec Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Semiconductor Manufacturing International (shanghai) Corporation

Sq Technology(shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Inventec (pudong) Technology Corporation

Fudan University

TSMC China Company Limited

Enraytek Optoelectronics Co., Ltd.

Saint-gobain Glass France

Shanghai Hua Hong Nec Electronics Company, Limited

TSMC China Company, Limiied

Shuai Zhang

Feng Han

Lian-Jie Li

Qiming Li

Jian Shen

Tingting Yu

Jianhua Ju

Ping Li

Jian Yuan Wu

Huiwen Xu

Bo Hong

Di Huang

Yan-Bin Lu

Xiaogang Lu

Zhao Geng

Shaofeng Yu

Tao Han

Chunlei Gao

Lifeng Yin

Shengyu Zhou

Shiwei Wu

Xiaofeng Lin

Fanpu He

Xiaowei Sun

Xiaoyu Zhao

Zhong-Hao Chen

Jui Lin Lu

Haijun Wang

Zeyuan Sun

Qingxuan Wang

Xiaohuan Zhang

Xiaojun Zhang

Jiankuo Zhang

Bin Song

Genyu Cui

Yuehua Sui

Fang Guan

Zhaosheng Meng

Zhihai Liu

Kuidong Gao

Yinglan Wu

Songlin Shi

Xiaohu Cao

Xikui Cui

Long Xue

Licheng He

Liguo Han

Yanbin Liu

Chunxiang Yang

Lirong Wan

Xiaohui Chen

Yin Yin

Min Fang

Qiang Li

Kai Li

A server includes a computer case including a front window, a GPU assembly mounted in the computer case and including a module bracket, and a locking assembly comprising a latching member. An end of the GPU assembly is located at the front window. The latching member is rotatably mounted at the front window and capable of switching between an unlocking state and a locking state, the module bracket is provided with a locking member corresponding to the latching member. In the locking state the latching member is at least partially inserted into the locking member to limit the GPU assembly in the computer case, and in the unlocking state, the latching member is disengaged from the locking member.

Server assembly

This invention provides a box for accommodating capacitor including bottom plate, two first side plates, two second side plates, fixed engagement structure and movable engagement structure. First side plates are disposed opposite to each other. Second side plates are disposed opposite to each other. Side plates are respectively connected to a plurality of side edges of bottom plate so that bottom plate and side plates together form accommodation space. Fixed engagement structure and the movable engagement structure are respectively connected to first side plates. Fixed engagement structure and movable engagement structure are located at a side of accommodation space that is located farthest from bottom plate. Movable engagement structure includes cantilever part and engagement part. Cantilever part is connected to one of first side plates. Engagement part protrudes from movable end part of cantilever part.

Box for accommodating capacitor and rack assembly

A semiconductor device includes a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is over a semiconductor substrate. The drift region is in the semiconductor substrate and laterally extends past a first side of the gate structure. The source region is in the semiconductor substrate and adjacent a second side of the gate structure opposite the first side. The drain region is in the drift region. The doped region is in the drift region and between the drain region and the gate structure. From a top view the doped region has a strip pattern extending in parallel with a strip pattern of the gate structure.

Semiconductor device with doped region between gate and drain

A liquid cooling device includes first cold plates, second cold plates, a water divider, a first inlet pipe, a first outlet pipe, first connection pipes, second inlet pipes, second outlet pipes, second connection pipes. The water divider has inner inlet connectors and inner outlet connectors. The first inlet pipe connects one inner inlet connector and one first cold plate. The first outlet pipe connects one inner outlet connector and another one first cold plate. The first connection pipes each connect different two of the other first cold plates. The second inlet pipes respectively connect the other inner inlet connectors and some second cold plates. The second outlet pipes respectively connect the other inner outlet connectors and some second cold plates. The second connection pipes each connect different two second cold plates.

Server, liquid cooling device and cold plate assembly

An electronic assembly including motherboard, first slide rail, second slide rail, expansion card and engagement component. Motherboard includes main circuit board and first connector. First and second slide rails are fixed on main circuit board. First slide rail has first engagement hole. Expansion card includes expansion circuit board and second connector. Expansion circuit board is disposed on first and second slide rails and has first positioning recess. Second connector is plugged into first connector. Engagement component includes connecting portion, first movable end portion, second movable end portion, first protruding portion, and second protruding portion. First and second movable end portions are respectively connected to two opposite sides of connecting portion. First protruding portion protrudes from first movable end portion and is removably engaged with first positioning recess. Second protruding portion protrudes from second movable end portion and is removably engaged with first engagement hole.

Electronic assembly having engagement component for fixing expansion card on motherboard

An expansion card frame is configured to be mount on a casing of a server chassis and is configured for installations of a riser card and an expansion card. The expansion card frame includes a side plate and a top plate. The side plate is configured for the installation of the riser card. The riser card is configured for an insertion of the expansion card. The top plate is connected to a side of the side plate and configured to cover the riser card. The top plate has at least one assembling structure, and the at least one assembling structure of the top plate is configured to be assembled with at least one assembling structure of an assembling frame so that the top plate, the side plate, and the assembling frame together form an accommodation space for accommodating a disk drive.

Expansion card frame and server chassis

A semiconductor device includes a substrate, a gate structure, a drift region, a source region, a drain region, and a doped region. The gate structure is above the substrate. The drift region is in the substrate and under the gate structure. The source region and the drain region are on opposite sides of the gate structure. The drain region is in the drift region, and the source region is outside the drift region. The doped region is in the drift region and between the drain region and the gate structure. The doped region is spaced apart from a bottom surface of the drain region.

Semiconductor device and manufacturing method thereof

An integrated circuit includes a bias pad within a buried oxide layer. A layer of semiconductor material is over the buried oxide layer. The layer of semiconductor material includes a doped regions for a transistor. An inter layer dielectric (ILD) material covers the layer of semiconductor material and a gate electrode for the transistor. The integrated circuit includes one or more bias contacts extending through the ILD material within an isolation region in the layer of semiconductor material. Bias contacts electrically connect to the first bias pad. The isolation structure insulates the one or more bias contacts from the doped regions of the transistor within the layer of semiconductor material. The one or more bias contacts are electrically connected to an interconnection structure of the integrated circuit which is configured to connect a voltage source to the bias pad.

Semiconductor device having buried bias pads

A method of manufacturing a super junction structure includes etching a material to define a trench, wherein the trench has a tapered profile. The method further includes implanting dopants into sidewalls and a bottom surface of the trench to define a doped region, wherein the doped region surrounds the trench. The method further includes depositing an undoped material into the trench. The method further includes performing a thermal process, wherein the thermal process drives the dopants from the doped region into the undoped material to form a conductive pillar in the trench.

Method of manufacturing a super junction structure and super junction structure

The present disclosure relates to the technical field of cryogenic cooling. In particular, the present disclosure relates to a mechanical vibration-isolated, liquid helium consumption-free cryogenic cooling device. The system according to some embodiments of the present disclosure comprises: a closed-cycle cryogenic cooling system, a helium heat exchange gas cooling and vibration isolation interface system, a cryogenic throttle valve cooling system, and a temperature feedback control system. The closed-cycle cooling system includes a cold head, a compressor, and a helium pipeline. The cryogenic throttle valve cooling system is thermally coupled to a low-temperature end of the cooling and vibration isolation interface.

Mechanical vibration-isolated, liquid helium consumption-free and extremely low temperature refrigerating system

A scanning probe microscope of the present disclosure includes: a room-temperature bore superconducting magnet including a liquid helium-consumption free closed-cycle cooling system, a superconducting magnet, and a chamber having a room-temperature bore; and a scanning probe microscope including a scanning head, a vacuum chamber, and a vibration isolation platform; and a computer control system. The room-temperature bore superconducting magnet is cooled by the cryogen-free closed-cycle cooling system which eliminates the dependence on liquid helium for high magnetic field operation. There is no physical contact between the scanning probe microscope and the superconducting magnet connected to the closed-cycle cooling system. The scanning probe microscope can achieve atomic-scale spatial resolution. The temperature of the scanning probe microscope is not restricted by the low temperature conditions for operation of the superconducting magnet. The scanning probe microscope and the vacuum chamber can achieve high-temperature baking independent of the superconducting magnet for ultra-high vacuum conditions.

High magnetic field scanning probe microscope employing liquid helium-free room-temperature bore superconducting magnet

An injection molding apparatus for forming a gasket around an edge of a glass is provided. The injection molding apparatus includes: an injection mold die; a fixing component, disposed inside the injection mold die and adapted for fixing the glass inside the injection mold die; a detection unit, mounted to the injection molding apparatus and adapted for detecting an image or vibration of the glass; a determination unit, coupled with the detection unit and adapted for determining whether the glass breaks based on a detection result of the detection unit. The apparatus can determine whether the glass breaks, such that the risk of scratching the injection mold die by glass breaking may be reduced. Therefore, the injection molding yield can be improved, the time for repairing the injection mold die may be reduced and a service life of the injection mold die may be prolonged.

Injection molding apparatus

Memory cells and fabrication methods thereof are provided. An exemplary method includes providing a substrate having a well region; forming a select gate structure, a floating gate structure and a dummy gate structure on a surface of the well region; forming a first lightly doped region, a second lightly doped region and a third lightly doped region in the well region, the first lightly doped region and the second lightly doped region being at two sides of the select gate structure respectively, the second lightly doped region being in between the select gate structure and the floating gate structure, and the third lightly doped region being in between the floating gate structure and the dummy gate structure; and forming bit line region in the first lightly doped region and a source region in the third lightly doped region, the source region being enclosed by the third lightly doped region.

Memory cell and fabrication method thereof

A method for manufacturing a semiconductor device includes providing a substrate structure including a substrate having multiple structures. Each of the structures includes an active region isolated by trenches in the substrate, an insulating layer on the active region, and a hardmask layer on the insulating layer. The method also includes performing a first ion implantation into a first structure configured to form a first type device, performing a pull-back process on the hardmask layer and on the insulating layer of the first structure to form a receded hardmask layer and a receded insulating layer and expose a corner portion of the active region, and performing a rounding process on the exposed corner portion. The rounded corner portion of the active region has an increased curvature radius that reduces the concentration of the electric field and improves the reliability of the semiconductor device.

Method of high voltage device fabrication

LED chip

Growing community of inventors

Shanghai, China

Shuai Zhang