Hunan Sanan Semiconductor Co., Ltd.

Xiamen Hongfa Automotive Electronics Co., Ltd.

Shuai Chen

Nientze Yeh

Liangui Wei

Yutao Fang

Boting Liu

Wenchao Peng

Maosong Yao

Fuchin Chang

An epitaxial structure for a high-electron-mobility transistor includes a substrate, a nucleation layer, a buffer layered unit, a channel layer, and a barrier layer sequentially stacked on one another in such order. The buffer layered unit includes a plurality of p-i-n heterojunction stacks. Each of the p-i-n heterojunction stacks includes p-type, i-type, and n-type layers which are made of materials respectively represented by chemical formulas of AlGaN, AlGaN, and AlGaN. For each of the p-i-n heterojunction stacks, x decreases and z increases along a direction away from the nucleation layer, and y is consistent and ranges from 0 to 0.7.

Epitaxial structure for high-electron-mobility transistor and method for manufacturing the same

A relay coil assembly includes a bobbin having flanges on two ends, an enameled wire wound around bobbin, a coil pin mounted to the flange and having an insertion portion, an enameled wire fixing portion and a signal wire fixing portion, and a signal wire. The signal wire fixing portion is provided with a first engagement recess with an opening facing downward, in which the signal wire is engaged. An inverted hook is provided at one of two recess sidewalls of the first engagement recess, and a slope section is provided at one of the two recess sidewalls of the first engagement recess. The opening gradually enlarges from inside to outside along the slope section, which is capable of squeezing the signal wire into the first engagement recess and the inverted hook is capable of preventing the signal wire from coming out.

Relay coil assembly

Growing community of inventors

Xiamen, China

Shuai Chen