Huga Optotech Inc.

Shu-Ying Yang

Lin-Chieh Kao

Tzong-Liang Tsai

An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a multi-layer structure disposed on the substrate, and the multi-layer structure consisted of a plurality of insulating layers with different refractive indices formed alternately; a first conductive semiconductor layer disposed on the substrate to cover the multi-layer structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; a transparent conductive layer disposed on the second conductive semiconductor layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting-efficiency.

Optical device and the forming method thereof

The invention discloses a light-emitting diode including a substrate, a main stack structure, a plurality of secondary pillars, a transparent insulating material, a transparent conducting layer, a first electrode and a second electrode. The pillars are formed on the substrate and surrounding the main stack structure. The main stack structure and each of the pillars has a first conducting-type semiconductor layer, a luminescing layer, and a second conducting-type semiconductor layer formed on the substrate in sequence. The transparent insulating material fills the gaps between the pillars and is as high as the pillars. The transparent conducting layer is coated on the main stack, the pillars and the transparent insulating material. The first electrode is formed on the transparent conducting layer and second electrode is formed on the first conducting-type semiconductor layer.

Light-emitting diode device with high luminescent efficiency

The invention discloses a light-emitting diode which includes a substrate on which a first conducting-type semiconductor layer, an illuminating layer and a second conducting-type semiconductor layer are formed sequentially, a transparent insulating material, a first transparent conducting layer, and a second transparent conducting layer. The top surface of the first conducting-type semiconductor layer includes a first region and a second region surrounded by the first region. Plural pillar-like holes are formed at the first region and protrude into the first conducting-type semiconductor layer. The transparent insulating material fills up the holes. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on the top surface of the transparent insulating material and on the first region.

Light-emitting diode

The invention discloses a light-emitting diode which comprises a substrate, a first conducting-type semiconductor layer, plural pillars, a transparent insulating material, an illuminating layer, a second conducting-type semiconductor layer, a first transparent conducting layer and a second transparent conducting layer. The first conducting-type semiconductor layer is formed on the substrate, and the top surface of the first conducting-type semiconductor layer comprises a first region and a second region surrounded by the first region. The pillars are formed on the first region. The transparent insulating material is filled in the gaps between the pillars to be as high as the pillars. The illuminating layer is formed on the second region, and the second conducting-type semiconductor layer is formed on the illuminating layer. The first transparent conducting layer is formed on the second conducting-type semiconductor layer, and the second transparent conducting layer is formed on a top surface of the pillars and the transparent insulating material.

A light-emitting diode includes a substrate, a primary stack structure, a secondary stack structure, a transparent insulating material and a transparent conducting layer in an embodiment. Each of the primary and the secondary stack structure has a first conducting-type semiconductor layer, and illuminating layer, and a second conducting-type semiconductor layer sequentially formed on the substrate, wherein plural pillar-like holes are formed at the top surface of the second conducting-type semiconductor layer of the secondary stack structure and protrude into the first conducting-type semiconductor layer of the secondary stack structure. The transparent insulating material is filled into the holes. The transparent conducting layer is coated on the primary stack structure, the transparent insulating material, and the tope surface of the second conducting-type semiconductor layer of the secondary stack structure.

Growing community of inventors

Gangshan Town, Taiwan

Shu-Ying Yang