Taiwan Semiconductor Manufacturing Comp. Ltd.

Vanguard International Semiconductor Corporation

Other

Shu-Wei Hsu

Chih-Wei Wu

Ying-Ho Chen

Ying-Tsung Chen

Yu-Jen Shen

Hao-Yun Cheng

Kei-Wei Chen

Hui-Chi Huang

Li-Che Chen

Chien-Hsien Song

Hsing-Chao Liu

Che-Hao Tu

Chih-Wen Liu

Ting-You Lin

Chi-Li Tu

Yeo-Sin Lin

In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.

Methods of forming semiconductor devices

A method comprising: providing a slurry to a polishing pad that is disposed on a wafer platen, the slurry comprising a plurality of electrically charged abrasive particles having a first electrical polarity; moving a first side of a wafer into contact with the slurry and the polishing pad; applying a first electrical charge having a second electrical polarity, opposite the first electrical polarity, to a first conductive rod; moving the first side of the wafer away from the polishing pad while the first electrical charge is applied to the first conductive rod; moving a first wafer brush into contact with the first side of the wafer; applying a second electrical charge having the second electrical polarity, opposite the first electrical polarity, to a second conductive rod arranged within the first wafer brush; and moving the first wafer brush away from the first side of the wafer.

Electrical cleaning tool for wafer polishing tool system

Semiconductor device and method

A semiconductor structure includes a semiconductor substrate, a buried layer, a pair of first well regions, a second well region, a body doped region, and a first heavily doped region. The semiconductor substrate has a first conductivity type. The buried layer is disposed on the semiconductor substrate. The first well regions having the second conductivity type are disposed on the buried layer. The second well region having the first conductivity type is disposed between the first well regions. The body doped region having the first conductivity type is disposed in the second well region. The first heavily doped region having the first conductivity type is disposed in the body doped region. From a top view, the first heavily doped region and the first well regions extend in a first direction, and the first heavily doped region extends beyond the opposite edges of the first well regions.

Semiconductor structures

A capacitor structure includes a first electrode plate disposed on a substrate, a first capacitor dielectric layer disposed on the first electrode plate, and a second electrode plate disposed on the first capacitor dielectric layer. A portion of the first electrode plate extends beyond an end of the second electrode plate to form a step. The capacitor structure also includes an etching stop layer, an inter-metal dielectric layer, a first via and a second via. The etching stop layer is disposed on the second electrode plate. The inter-metal dielectric layer covers the etching stop layer, the second electrode plate, the first capacitor dielectric layer and the first electrode plate. The first via penetrates through the inter-metal dielectric layer to contact the first electrode plate at the portion extending beyond the second electrode plate. The second via penetrates through the inter-metal dielectric layer to contact the second electrode plate.

Capacitor structures and methods for fabricating the same

A lipstick case includes an inner tubular member having an intermediate portion formed with two opposite Z-shaped slots. The inner tubular member has an upper end having a spherical portion on which are formed a pair of grooves. Each groove first extends slantwise from an upper edge to a lower edge and then extends horizontally along the surface of the lower edge. A pair of curved covers have a shape of a quarter of a sphere and a projection fitted in a respective one of the grooves. An intermediate tubular member is formed with a spiral groove and a flange close to a lower end of the intermediate tubular member. A tubular seat has an open top through which a lipstick is fitted therein, the tubular seat having a protuberance extending through the Z-shaped slot into the spiral groove. A rotatable base is rotatably fitted in a lower end of the intermediate tubular member and has a plurality of projections engaged with the holes of the inner tubular member. An outer tubular member is snugly fitted over the intermediate tubular member, whereby the lipstick case does not need a separate cap to close when not in use.

Lipstick case

Growing community of inventors

Hsinchu, Taiwan

Shu-Wei Hsu