Shin-Etsu Handotai Co., Ltd.

Shu Sugisawa

Fumio Tahara

Wei Feng Qu

Yuuki Ooi

The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1&#xd7;10to 1&#xd7;10atoms/cm, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300&#xb0; C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.

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Tokyo, Japan

Shu Sugisawa