Kabushiki Kaisha Toshiba

Shu Sasaki

Hirokazu Sekine

Certain embodiments provide a method for producing a solid-state imaging device including the steps of forming an interconnection layer, forming a passivation film, forming a resist layer, forming a plurality of protruding portions and an opening, and forming an electrode pad. In the step of forming the interconnection layer, the interconnection layer is formed on the surface of the semiconductor substrate having a photodiode. In the step of forming the resist layer, the resist layer is formed on the passivation film such that the resist layer has a plurality of first openings above the photodiode and has a second opening above the interconnection of the interconnection layer. In the step of forming the plurality of protruding portions and the opening, the plurality of protruding portions and the opening are formed by etching the passivation film via the resist layer.

Method for producing solid state imaging device and solid-state imaging device

A solid-state imaging device producing method includes the steps of: applying a resist material onto a substrate in which a channel region is formed; forming a resist layer by exposure and development of the resist material using a mask, the resist layer having an opening and a thin-film portion, the mask having a first region through which light is transmitted and a second region through which a smaller quantity of light than that the light transmitted through the first region is transmitted; subjecting the substrate to ion implantation using the resist layer as a mask to form an impurity region; etching the substrate using the resist layer as a mask after the ion implantation to form an alignment mark; and forming an electrode on the impurity region and part of the channel region using the alignment mark as a reference.

Solid-state imaging device producing method and exposure mask

A method for manufacturing a semiconductor device includes steps of forming an embedded channelin a semiconductor substrateforming a resist layer on the embedded channelthrough an oxide film, exposing the resist layer using a grating mask the light transmissivity of which varies toward transfer directions of electric charges, developing the exposed resist layer to form a resist mask having a gradient, forming a first impurity regionhaving a concentration gradient by injecting ions into the embedded channelthrough the resist mask, and arranging transfer electrodesat prescribed positions on the first impurity regionthrough the oxide filmafter removing the resist mask, wherein a potential profile becomes deeper toward the transfer directions of the electric charges.

Method for manufacturing a charge coupled device

A method for manufacturing a solid state imaging device includes steps of forming a photodiode layer buried in a semiconductor substrate by ion injection and of forming a shielding layer buried in the photodiode layer by ion injection. At least in the ion injection process in the step of forming the shielding layer, an ion injection pause period is provided at least one time during whole ion injection step. According to the method, crystal defects are prevented from generating even if ion injection is performed with high energy, thereby suppressing dark current without complexity in manufacturing process.

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Iwate-ken, Japan

Shu Sasaki