California Institute of Technology

Leland Stanford Junior University

Shu Hu

Nathan S Lewis

Paul C McIntyre

A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions.

Axially-integrated epitaxially-grown tandem wire arrays

A photoanode includes a passivation layer on a light absorber. The passivation layer is more resistant to corrosion than the light absorber. The photoanode includes a surface modifying layer that is location on the passivation layer such that the passivation layer is between the light absorber and the surface modifying layer. The surface modifying layer reduces a resistance of the passivation layer to conduction of holes out of the passivation layer.

Protecting the surface of a light absorber in a photoanode

A device and a method of forming a continuous polycrystalline Ge film having crystalline Ge islands is provided that includes depositing an amorphous Ge (a-Ge) layer on a substrate, oxidizing the top surface of the a-Ge layer to form a GeOlayer, depositing a seed layer of Al on the GeOlayer and catalyzing the Al seed layer, where Ge mass transport is generated from the underlying a-Ge layer to the Al seed layer through the GeOlayer by thermal annealing, where a continuous polycrystalline Ge film having crystalline Ge islands is formed on the Al seed layer.

Growing community of inventors

Pasadena, CA, United States of America

Shu Hu