United Microelectronics Corp.

Shu-Hsuan Chih

Sheng-Yuan Hsueh

Shih-Chieh Hsu

Chih-Kai Kang

Chia-Chen Sun

Po-Kuang Hsieh

Chi-Horn Pai

Po-Cheng Huang

Po-Jui Liao

Jie-Ning Yang

Yao-Chang Wang

Chi-Sheng Tseng

Kuang-Hung Huang

Shih-Chang Chang

The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.

Resistor and fabrication method thereof

A test key structure for use in measuring step height includes a substrate, and a pair of test contacts. The substrate includes an isolation region and a diffusion region. The test contact pair includes a first test contact and a second test contact for measuring electrical resistances. The first test contact is disposed on the diffusion region and the second test contact is disposed on the isolation region.

Test key structure and method for measuring step height by such test key structure

Growing community of inventors

Kaohsiung, Taiwan

Shu-Hsuan Chih