Qualcomm Incorporated

Shu-Hsien Liao

Cheng-Han Wang

Victor Korol

Feipeng Wang

A power amplifier bias circuit having high dynamic range and low memory is disclosed. In an exemplary embodiment, an apparatus includes an output stage configured to generate a biased RF signal based on a first DC signal and a filtered signal. The apparatus also includes a low pass filter configured to filter the biased RF signal to generate the filtered signal.

Amplifier bias circuit

An apparatus includes a plurality of stacked transistors in a multi-stacked power amplifier. At least one transistor of the plurality of stacked transistors is configured to operate in a first mode and in a second mode. The at least one transistor of the plurality of stacked transistors is configured to be biased by a low power biasing network to operate in the first mode.

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San Jose, CA, United States of America

Shu-Hsien Liao