Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Shu-Hang Liao

Jing-Cheng Lin

Szu-Wei Lu

Ying-Ching Shih

Chih-Wei Wu

Chen-Chi Martin Ma

Chuan-Yu Yen

Yu-Feng Lin

Min-Chien Hsiao

Hsu-Chiang Kuan

Han-Lang Wu

Hsun-Yu Su

Ying-Ying Cheng

Chih-Hung Hung

Ming-Yu Yen

Jeng-Chih Weng

A package structure is provided. The package structure includes a first die and a second die, a dielectric layer, a bridge, an encapsulant, and a redistribution layer structure. The dielectric layer is disposed on the first die and the second die. The bridge is electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge. The encapsulant is disposed on the dielectric layer and laterally encapsulating the bridge. The redistribution layer structure is disposed over the encapsulant and the bridge. A top surface of the bridge is in contact with the RDL structure.

Package structure

A package structure and a method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a bridge, an underfill layer and a RDL structure. The first die and the second die are placed side by side. The first encapsulant encapsulates sidewalls of the first die and sidewalls of the second die. The bridge electrically connects the first die and the second die through two conductive bumps. The underfill layer fills the space between the bridge and the first die, between the bridge and the second die, and between the bridge and a portion of the first encapsulant. The RDL structure is located over the bridge and electrically connected to the first die and the second die though a plurality of TIVs. The bottom surfaces of the two conductive bumps are level with a bottom surface of the underfill layer.

Package structure and method of manufacturing the same

A package structure and a method of manufacturing the same are provided. The package structure includes a first die, a second die, a first encapsulant, a bridge, an underfill layer and a RDL structure. The first die and the second die are placed side by side. The first encapsulant encapsulates sidewalls of the first die and sidewalls of the second die. The bridge electrically connects the first die and the second die through two conductive bumps. The underfill layer fills the space between the bridge and the first die, between the bridge and the second die, and between the bridge and a portion of the first encapsualnt. The RDL structure is located over the bridge and electrically connected to the first die and the second die though a plurality of TIVs. The bottom surfaces of the two conductive bumps are level with a bottom surface of the underfill layer.

Packaged semiconductor devices and methods of packaging thereof are disclosed. In some embodiments, a packaged semiconductor device includes a first device and a second device coupled to the first device. The second device includes an integrated circuit die covered by a molding compound. An over-mold structure is disposed over the second device.

Packaged semiconductor devices and packaging methods thereof

A substrate for counter electrode of dye-sensitized solar cell is made of a composite material, which is prepared by: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein 0.01-10 wt % of an electrically conductive filler, based on the weight of the vinyl ester resin, is optionally added during the compounding; b) molding the BMC material from step a) to form a substrate for the counter electrode having a desired shaped at 80-200&#xb0; C. and 500-4000 psi.

Composite substrate for counter electrode of dye-sensitized solar cell

A composite bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein carbon fiber 1-20 wt %, modified organo clay or noble metal plated modified organo clay 0.5-10 wt %, and one or more conductive fillers selected form: carbon nanotube (CNT) 0.1-5 wt %, nickel plated carbon fiber 0.5-10 wt %, nickel plated graphite 2.5-40 wt %, and carbon black 2-30 wt %, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a bipolar plate having a desired shaped at 80-200&#xb0; C. and 500-4000 psi.

Manufacturing process of conductive polymer composite bipolar plate for fuel cell having high gas permeability-resistance and heat-resistance

A composite bipolar plate for a polymer electrolyte membrane fuel cell (PEMFC) is prepared as follows: a) compounding vinyl ester and graphite powder to form bulk molding compound (BMC) material, the graphite powder content ranging from 60 wt % to 95 wt % based on the total weight of the graphite powder and vinyl ester, wherein carbon nanotubes together with a polyether amine dispersant or modified carbon nanotubes 0.05-10 wt %, based on the weight of the vinyl ester resin, are added during the compounding; b) molding the BMC material from step a) to form a bipolar plates having a desired shaped at 80-200&#xb0; C. and 500-4000 psi.

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Hsinchu, Taiwan

Shu-Hang Liao