Taiwan Semiconductor Manufacturing Comp. Ltd.

Shu-Fang Fu

Chi-Feng Huang

Victor Chiang Liang

Chia-Chung Chen

Han-Min Tsai

Hsiao-Chun Lee

Shou-Chun Chou

A method for forming a semiconductor device is provided. The method includes forming a gate structure over a fin structure. The method includes forming a hard mask layer over the gate structure. The hard mask layer has a first opening spaced apart from a first side of the gate structure by a first distance and a second opening spaced apart from a second side of the gate structure by a second distance that is different from the first distance. The method also includes removing the fin structure not covered by the hard mask layer. The method further includes forming a first source/drain feature in the fin structure and filling the first opening of the hard mask layer. The method further includes forming a second source/drain feature in the fin structure and filling the second opening of the hard mask layer.

High-speed semiconductor device and method for forming the same

A bipolar junction transistor includes an emitter, a base contact, a collector and a shallow trench isolation. The base contact has two base fingers that form a corner to receive the emitter. The collector has two collector fingers extending along the base fingers of the base contact. The shallow trench isolation is disposed in between the emitter and the base contact and in between the base contact and the collector.

Bipolar junction transistor layout

Growing community of inventors

Xinpu Township, Hsinchu County, Taiwan

Shu-Fang Fu