Taiwan Semiconductor Manufacturing Comp. Ltd.

Shu-E Ku

Yung-Cheng Lu

Chung-Chi Ko

Lain-Jong Li

Lih-Ping Li

Yu-Huei Chen

A method for forming a capping layer for improved adhesion with an underlying insulating layer in a multiple layer semiconductor device manufacturing process including providing a semiconductor wafer including a process surface comprising a dielectric insulating layer; and, providing a capping layer overlying the dielectric insulating layer according to a chemical vapor deposition CVD) process. The capping layer of the present invention has improved adhesion and a reduced dielectric constant with comparable current leakage compared to capping layers of the prior art.

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Miaoli, Taiwan

Shu-E Ku