Jmem Technology Co., Ltd

Shu-chieh Chang

Chen-Feng Chang

Yu-chen Lo

Chun-hao Liang

Dong-yu Wu

Tsung-han Lu

Meng-lin Wu

The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

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Taoyuan, Taiwan

Shu-chieh Chang