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Infineon Technologies Richmond, LP

Shrinivas Govindarajan

Anthony Ciancio

Mukund Patel

A method for rapidly depositing a borosilicate glass film on a semiconductor wafer includes controlling the pressure within the chamber, introducing oxygen into the chamber, introducing a carrier gas into the chamber, injecting triethyl borate (&ldquo;TEB&rdquo;) and tetraethyl orthosilicate (&ldquo;TEOS&rdquo;) into the chamber, stabilizing the injection of TEB and TEOS, adjustably spacing a heater relative to the chamber, introducing ozone gas into the chamber, and depositing borosilicate glass film at a rate of at least about 4,500 angstroms per minute.

Rapid deposition of borosilicate glass films

An apparatus and method of tungsten via fill using a low pressure, 2-step nucleation tungsten deposition process. The tungsten via fill includes a silane soak, a nucleation film growth, and a bulk tungsten film deposition. The nucleation film growth is a low pressure, 2-step process including a controlled first nucleation film growth and a second nucleation film growth. A wafer fabricating system that includes a film depositing system and a control system is used. The film depositing system includes a reaction chamber with at least one silane-containing gas source, a tungsten-containing gas source, and a substrate heating source. The control system instructs the silane-containing gas source and the tungsten-containing gas source to flow with a significantly higher ratio of silane-containing gas (SiH,) to form a first silane-rich nucleation layer. The control system then instructs the gas sources to flow with a higher ratio of tungsten-containing gas, such as WF,, to form a second tungsten nucleation layer. The low pressure, 2-step process results with improved nucleation film step coverage.

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Glen Allen, VA, United States of America

Shrinivas Govindarajan