Sioptical, Inc.

Optronx, Inc.

Shrenik Delwala

An optical waveguide device includes an active optical waveguide device and a passive optical waveguide device. The active optical waveguide device is formed at least in part on a semiconductor layer and includes an electrode portion. A region of altered effective mode index is created by the active optical waveguide device and controlled by application of an electric voltage to the electrode portion in a manner that alters a free carrier density of the region of altered effective mode index. Changing the electric voltage to the electrode portion changes the effective mode index in the region of altered effective mode index. The passive optical waveguide device is formed at least in part from a polysilicon layer deposited on the semiconductor layer. An effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide couples the active optical waveguide device and the passive optical waveguide device, and the optical waveguide is formed at least in part using the semiconductor layer.

Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same

A passive optical waveguide device deposited on a wafer that includes an insulator layer and an upper semiconductor layer formed at least in part from silicon. The upper silicon layer forms at least part of an optical waveguide, such as a slab waveguide. The passive optical waveguide device includes an optical waveguide, a gate oxide, and a polysilicon layer. The polysilicon layer projects a region of static effective mode index within the optical waveguide having a different effective mode index than the optical waveguide outside of the region of the static effective mode index. The region of static effective mode index has a depth extending within the optical waveguide. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time.

Polyloaded optical waveguide devices and methods for making same

An arrayed waveguide grating deposited on a wafer that includes an upper semiconductor layer comprising a first port, a plurality of second ports, a gate oxide layer, a polysilicon layer, and a plurality of arrayed waveguides. The gate oxide layer is deposited above the upper semiconductor layer. The polysilicon layer is deposited above the gate oxide layer. The plurality of arrayed waveguides extend between the first port and each one of the plurality of second ports. Each one of the plurality of arrayed waveguides are at least partially formed by the upper semiconductor layer, the polysilicon layer, and the gate oxide layer. Each one of the arrayed waveguides is associated with a portion of the polysilicon layer. Each portion of the polysilicon layer has a different cross-sectional area, wherein each of the arrayed waveguides has a different effective mode index. The value and position of the effective mode index associated with each of the respective arrayed waveguides remains substantially unchanged over time.

Arrayed waveguide grating, and method of making same

An interferometer includes at least one optical waveguide, a first passive optical waveguide segment, and a second passive optical waveguide segment. The optical waveguide includes at least one gate oxide layer deposited on a semiconductor layer of a wafer and a polysilicon layer deposited on the gate oxide layer. The first passive optical waveguide segment includes a first portion of the polysilicon layer that projects a first region of static effective mode index within the optical waveguide. The second passive optical waveguide segment includes a second portion of the polysilicon layer that projects a second region of static effective mode index within the optical waveguide. A length of the first passive optical waveguide segment equals a length of the second passive optical waveguide segment. The first and second passive optical waveguide segments are coupled to each other and together form at least in part the optical waveguide. The first and second passive optical waveguide segments and the optical waveguide are each formed at least in part from the semiconductor layer.

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Orefield, PA, United States of America

Shrenik Delwala