Sioptical, Inc.

Optronx, Inc.

Cisco Technology, Inc.

Shrenik Deliwala

Vipulkumar K Patel

Robert Keith Montgomery

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Simulation program for integrated optical/electronic circuit

Hybrid active and electronic circuit with evanescent coupling

An apparatus and associated method for controlling the propagation constant of a region of focusing propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. A region of focusing propagation constant is projected into the waveguides that corresponds, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of focusing propagation constant is controlled by varying the voltage. Light of certain wavelengths passing through the region of focusing propagation constant has a variable focal length.

Optical lens apparatus and associated method

Optical coupler having evanescent coupling region

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOT waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Integrated optical/electronic circuits and associated methods of simultaneous generation thereof

An optical waveguide device includes an active optical waveguide device and a passive optical waveguide device. The active optical waveguide device is formed at least in part on a semiconductor layer and includes an electrode portion. A region of altered effective mode index is created by the active optical waveguide device and controlled by application of an electric voltage to the electrode portion in a manner that alters a free carrier density of the region of altered effective mode index. Changing the electric voltage to the electrode portion changes the effective mode index in the region of altered effective mode index. The passive optical waveguide device is formed at least in part from a polysilicon layer deposited on the semiconductor layer. An effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide couples the active optical waveguide device and the passive optical waveguide device, and the optical waveguide is formed at least in part using the semiconductor layer.

Optical waveguide circuit including passive optical waveguide device combined with active optical waveguide device, and method for making same

An anisotropically etched prism assembly including a device portion, a light coupling portion, and an alignment portion. The anisotropically etched prism assembly having a plurality of optical devices arranged in a first fixed pattern. Each pair of said plurality of optical devices spaced a first prescribed distance apart. The light coupling portion including a plurality of anisotropically etched prisms. Each one of the plurality of anisotropically etched prisms is arranged in second fixed pattern so as to correspond with a respective one of the plurality of optical devices. Each one of the pairs of said plurality of anisotropically etched prisms are spaced a second prescribed distance apart, the second prescribed distance substantially equals the first prescribed distance. The alignment portion aligns the light coupling portion and the device portion. Each one of said plurality of anisotropically etched prisms are aligned with a respective one of said plurality of optical devices.

Anisotropic etching of optical components

An effective index modifier that modifies light propagation in a waveguide. The device is formed on a wafer, such as a Silicon-On-Insulator (SOI) wafer that includes an insulator layer and an upper silicon layer. A waveguide is formed at least in part in the upper silicon layer of the SOI wafer. The waveguide guides an optical signal by total internal reflection. At least one micro-mechanical system (MEMS) having at least one movable component is disposed a positive distance away from the waveguide. Application of voltage to the MEMS results in a variation of the distance between the moveable component and the waveguide, which in turn alters the effective index of the waveguide in a location proximate the moveable object, thereby resulting in modification of light propagation in the waveguide.

Method and apparatus for altering the effective mode index of an optical waveguide

Method for forming passive optical coupling device

An integrated optical circuit comprising an optical waveguide and an evanescent coupler. The optical waveguide is located on a wafer. The optical waveguide is formed from an upper semiconductor layer of the wafer, a gate oxide layer deposited on the upper semiconductor layer, and a polysilicon layer deposited on the gate oxide layer. The evanescent coupling region is formed at least in part from a gap portion that optically couples light to the upper semiconductor layer of the optical waveguide using the evanescent coupling region. Light can be coupled from outside of the passive optical waveguide device via the evanescent coupling region into the optical waveguide. Alternatively, light can be coupled from the optical waveguide through the evanescent coupling region out of the passive optical waveguide device. The polysilicon layer projects a region of static effective mode index within the optical waveguide, wherein the region of static effective mode index has a different effective mode index than the optical waveguide outside of the region of static effective mode index. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time and applies a substantially unchanging optical function to light travelling through the region of static effective mode index within the optical waveguide over the lifetime of the passive optical waveguide device.

Polyloaded optical waveguide device in combination with optical coupler, and method for making same

Focusing mirror and lens

Hybrid multiplexer/demultiplexer

An apparatus and associated method for altering the propagation constant of a region of changable propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. An altered region of changable propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of changable propagation constant is controlled by varying the voltage.

Electronic semiconductor control of light in optical waveguide

An optical waveguide device includes a first passive optical waveguide device and a second passive optical waveguide device. The first passive optical waveguide device is etched, at least in part, in a semiconductor layer of a wafer. The value and position of an effective mode index within the first passive optical waveguide device remains substantially unchanged over time. The second passive optical waveguide device is formed at least in part from a polysilicon layer deposited above an unetched portion of the semiconductor layer. The effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the second passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide forms at least a part of both the first passive optical waveguide device and the second passive optical waveguide device. The optical waveguide couples the first passive optical waveguide device and the second passive optical waveguide device, and the optical waveguide is formed at least in part using the semiconductor layer.

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Orefield, PA, United States of America

Shrenik Deliwala