Shin-etsu Chemical Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Kanazawa University

International Business Machines Corporation

National University Corporation Kanazawa University

Shozo Shirai

Hitoshi Noguchi

Shoji Akiyama

Masahiko Ogura

Hiroyuki Otsuka

Masayuki Tanno

Toshiharu Makino

Satoshi Yamasaki

Hiromitsu Kato

Daisuke Takeuchi

Norio Tokuda

Tsubasa Matsumoto

Takao Inokuma

Hiroyuki Kawashima

Daisuke Kuwabara

Takeshi Kinsho

Tsutomu Ogihara

Masaki Ohashi

Satoshi Watanabe

Wai-Kin Li

Yoshio Kawai

Wu-Song S Huang

Seiichiro Tachibana

Dario Leonardo Goldfarb

Hideo Kaneko

Takafumi Ueda

Martin Glodde

Kazumi Noda

Toshiharu Yano

Shigeru Konishi

Ryuji Koitabashi

Shinichi Igarashi

Koitabashi Ryuji

A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.

Method for manufacturing substrate for solar cell and substrate for solar cell

The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.

A method of manufacturing a composite substrate that includes bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

Method of manufacturing composite substrate

Provided is a composite substrate for surface acoustic wave device which does not cause peeling of an entire surface of a piezoelectric single crystal film even when heating the film to 400&#xb0; C. or higher in a step after bonding. The composite substrate is formed by providing a piezoelectric single crystal substrate and a support substrate, forming a film made of an inorganic material on at least one of the piezoelectric single crystal substrate and the support substrate, and joining the piezoelectric single crystal substrate with the support substrate so as to sandwich the film made of the inorganic material.

Method of producing composite substrate for surface acoustic wave device

A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.

Diamond substrate and freestanding diamond substrate

Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength &#x3bb; of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.

Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate

Method for manufacturing diamond substrate

The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.

A single-crystal diamond growth base material on which single-crystal diamond is grown having at least a base substrate of a material having a linear expansion coefficient smaller than that of MgO and not smaller than 0.5&#xd7;10/K; a single-crystal MgO layer formed on a face of the base substrate where the single-crystal diamond is grown by a bonding method; and a film constituted of any one of an iridium film, a rhodium film, and a platinum film heteroepitaxially grown on the single-crystal MgO layer.

Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material

Disclosed is a composite substrate manufacturing method whereby, after bonding a semiconductor substrate () and a supporting substrate () to each other, the semiconductor substrate () is thinned, and a composite substrate () having a semiconductor layer () on the supporting substrate () is obtained. On the supporting substrate () surface to be bonded, a coating film () containing polysilazane is formed, a silicon-containing insulating film () is formed by performing firing by heating the coating film () to 600-1,200&#xb0; C., then, the semiconductor substrate () and the supporting substrate () are bonded to each other with the insulating film () therebetween, thereby suppressing bonding failures due to surface roughness and defects of the supporting substrate, and easily obtaining the composite substrate.

Composite substrate manufacturing method, and composite substrate

A composition comprising (A) a near-infrared absorbing dye of formula (1), (B) a polymer, and (C) a solvent is used to form a near-infrared absorptive layer. In formula (1), Rand Rare a monovalent hydrocarbon group which may contain a heteroatom, k is 0 to 5, m is 0 or 1, n is 1 or 2, Z is oxygen, sulfur or C(R')(R&#x2033;), R&#x2032; and R&#x2033; are hydrogen or a monovalent hydrocarbon group which may contain a heteroatom, and Xis an anion. 

Near-infrared absorptive layer-forming composition and multilayer film

A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.

Photomask blank, processing method, and etching method

There is disclosed a coated-type silicon-containing film stripping process for stripping off to remove a coated-type silicon-containing film obtained by coating a silicon-containing film composition used in a lithography on a substrate, comprising, at least: a first step of treating the silicon-containing film with an acidic stripping solution containing sulphate ion and/or fluoride ion; and a second step of treating the silicon-containing film with an alkaline stripping solution containing a nitrogen compound. There can be provided a process for allowing a silicon-containing film, which has not been conventionally removed unless dry stripping is adopted, to be removed by a stripping process based on a stripping solution (wet stripping).

Coated-type silicon-containing film stripping process

Growing community of inventors

Takasaki, Japan

Shozo Shirai