Mitsubishi Electric Corporation

Shozo Shikama

Kenichi Ohtsuka

Naoki Yutani

Yoshinori Matsuno

Kenichi Kuroda

Sunao Aya

Hideaki Yuki

Hiroshi Watanabe

Yoichiro Tarui

Koji Okuno

The present application relates to a technique of reducing the occurrence of a spot breakdown near a probe needle with the intention of preventing damage on the probe needle during a test implemented by applying a high voltage to a semiconductor device. In a method of measuring a semiconductor device, the semiconductor device includes: a semiconductor substrate (), an epitaxial layer (), at least one second conductivity type region () of a second conductivity type formed in a part of the surface layer of the epitaxial layer to have a contour, a Schottky electrode (), an anode electrode (), and a cathode electrode (). A voltage is applied while the probe needle () is brought into contact with the upper surface of the anode electrode in a range in which the contour of the at least one second conductivity type region is formed in a plan view.

Method of measuring semiconductor device by applying voltage to the semiconductor device using probe needle

A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 &#x3bc;m and step (b) of reducing the film thickness of the developing solution film to 6 &#x3bc;m or less.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device of the present invention includes steps of (a) preparing a silicon carbide substrate including a photoresist film formed on a principal surface, (b) dropping a first developing solution onto the photoresist film, (c) rotating the silicon carbide substrate to drain the first developing solution dropped onto the photoresist film after a lapse of a first development time since the end of the step (b), (d) dropping a second developing solution onto the photoresist film after the step (c), and (e) rotating the silicon carbide substrate to drain the second developing solution dropped onto the photoresist film after a lapse of a second development time since the end of the step (d).

An object is to provide a method for manufacturing a silicon carbide semiconductor device in which a time required for removing a sacrificial oxide film can be shortened and damage to a surface of the silicon carbide layer can be reduced. The method for manufacturing a silicon carbide semiconductor device includes: (a) performing ion implantation to a silicon carbide layer; (b) performing activation annealing to the ion-implanted silicon carbide layer; (c) removing a surface layer of the silicon carbide layer, to which the activation annealing has been performed, by dry etching; (d) forming a sacrificial oxide film on a surface layer of the silicon carbide layer, to which the dry etching has been performed, by performing sacrificial oxidation thereto; and (e) removing the sacrificial oxide film by wet etching.

Method for manufacturing silicon carbide semiconductor device

An object of the invention is to provide a method for manufacturing a silicon carbide semiconductor device having constant characteristics with reduced variations in forward characteristics. The method for manufacturing the silicon carbide semiconductor device according to the invention includes the steps of: (a) preparing a silicon carbide substrate; (b) forming an epitaxial layer on a first main surface of the silicon carbide substrate; (c) forming a protective film on the epitaxial layer; (d) forming a first metal layer on a second main surface of the silicon carbide substrate; (e) applying heat treatment to the silicon carbide substrate at a predetermined temperature to form an ohmic junction between the first metal layer and the second main surface of the silicon carbide substrate; (f) removing the protective film; (g) forming a second metal layer on the epitaxial layer; and (h) applying heat treatment to the silicon carbide substrate at a temperature from 400&#xb0; C. to 600&#xb0; C. to form a Schottky junction of desired characteristics between the second metal layer and the epitaxial layer.

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Tokyo, Japan

Shozo Shikama