Nippon Electric Co., Ltd.

Shozo Noguchi

Shinzo Anazawa

Naobumi Tsuzuki

Yasunobu Oshima

Katsunori Miyagaki

Yukio Hirakawa

Tohru Kamata

A hermetically sealed optoelectronic semiconductor device and package assembly comprises a metallic stud providing an electrical connection to one of the device electrodes, and a heat sink mounting block for the device mounted on and electrically connected to the stud. The device is mounted on the mounting block so that the optical axis of the device is aligned with the stud axis. The mounting block has a substantially annular bottom coaxial with the stud axis so that thermal stress generated between the stud and the mounting block will be substantially balanced and deviation of the optical axis of the device will be minimized. A gap can be provided in the annular bottom to accommodate an electrical lead to which the other of the device electrodes is connected. Alternatively, the annular bottom is continuous and the electrical lead passes through the central passage provided in the stud.

Optoelectronic semiconductor devices in hermetically sealed packages

A semiconductor device in which a conducting shielding member is disposed over the space between the input and output terminal metal layers and over the semiconductor chip bonded to the output metal layer. The shielding member is electrically connected to the common terminal metal layer. This construction results in a reduction in the storage capacitance between the input and output terminal layers and improved power gain and stability of operation, particularly at high frequencies.

Semiconductor device having improved high frequency characteristics

A semiconductor device, which provides efficient heat dissipation, includes a semiconductor support member formed of an insulating, thermally conductive material having a projecting portion on the top surface and a first conducting layer extending along the surfaces of the support members from the bottom to the projecting portion. An insulating wall member for installing terminals is disposed on the top surface of the semiconductor support member in areas around the projecting portion. A second conducting layer is formed on the top end face of the wall member, and a hollow portion is provided in the wall member below the second conducting layer.

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Tokyo, Japan

Shozo Noguchi