Mitsubishi Materials Corporation

Ulvac, Inc.

Shozo Komiyama

Satoru Mori

Akifumi Mishima

Shoubin Zhang

Shinichi Funaki

Kenichi Hijikata

Hayato Sasaki

Hitoshi Maruyama

Yuto Toshimori

Sohei Nonaka

Ichiro Shiono

Gou Yamaguchi

Shinya Koike

Ikuo Ito

Sei Okuda

A sputtering target, which has a composition comprising: one or more elements selected from Cu, Sn, Sb, Mg, In, and Ti in a range of 0.1 atomic % or more and 15.0 atomic % or less in total; S in a range of 0.5 atomic ppm or more and 200 atomic ppm or less; and a Ag balance including inevitable impurities, is provided.

Ag alloy sputtering target and Ag alloy film manufacturing method

A sputtering target is provided for forming a protective film which is used for forming a protective film on a single surface or both surfaces of a Cu wiring film, the sputtering target including 5 to 15 mass % of Ni or Ni and Al in total (where the Ni content is 0.5 mass % or higher); 0.1 to 5.0 mass % of Mn; 0.5 to 7.0 mass % of Fe; and a balance including Cu and inevitable impurities.

Sputtering target for forming protective film and multilayer wiring film

Disclosed is a silver alloy target for forming a reflective electrode film for an organic EL element, which has a component composition containing 0.1% to 1.5% by mass of In and the remainder composed of Ag and unavoidable impurities. The average grain diameter of the crystal grain of the alloy is 150 to 400 &#x3bc;m, and the dispersion of the grain diameter of the crystal grain is 20% of the average grain diameter or less.

Silver alloy target for forming reflection electrode film for organic EL element, and method for manufacturing the silver alloy target

A semi-reflective film and reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities, and a target which is made of a silver alloy having a composition consisting of 0.001 to 0.1% by mass of Ca, 0.05 to 1% by mass of Mg, and a remainder containing Ag and inevitable impurities; and a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities, and an Ag alloy sputtering target for forming a semi-reflective film for an optical recording medium, which is made of a silver alloy having a composition consisting of 0.05 to 1% by mass of Mg, 0.05 to 1% by mass of one or more of Eu, Pr, Ce and Sm, and a remainder containing Ag and inevitable impurities.

Semi-reflective film and reflective film for optical recording medium, and Ag alloy sputtering target for forming semi-reflective film or reflective film for optical recording medium

This thin-film transistor includes a drain electrode film and a source electrode film, each of which includes a composite copper alloy film including a copper alloy underlayer that is formed so as to come into contact with a barrier film and a Cu layer that is formed on the copper alloy underlayer. One aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance. Another aspect of the copper alloy underlayer includes a concentrated layer including 2 mol % to 30 mol % of Ca, 1 mol % to 10 mol % in total of one or more selected from the group consisting of Al, Sn, and Sb, 20 mol % to 50 mol % of oxygen, and Cu and inevitable impurities as the balance.

Thin-film transistor and intermediate of thin-film transistor

This thin-film transistor includes adhesive strength enhancing films between a barrier film and electrode films. Each of the adhesive strength enhancing film is composed of two zones including (a) a pure copper zone that is formed on the electrode film side, and (b) a component concentrated zone that is formed in an interface portion contact with the barrier film, and that includes Cu, Ca, oxygen, and Si as constituents. In concentration distributions of Ca and oxygen in a thickness direction of the component concentrated zone, a maximum content of Ca of a Ca-containing peak is in a range of 5 to 20 at %, and a maximum content of oxygen of an oxygen-containing peak is in a range of 30 to 50 at %, respectively.

Thin-film transistor having high adhesive strength between barrier film and drain electrode and source electrode films

A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of AlSiO, LaSiO, or InSiOis formed in a base of the target.

High-strength sputtering target for forming protective film for optical recording medium

Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAlintermetallic compound phase and a BaAlintermetallic compound phase, and Eu forms a solid solution with Ba in the BaAlintermetallic compound and in the BaAlintermetallic compound, respectively.

High strength sputtering target for forming phosphor film in electroluminescence element

A high-strength target material for forming a thin magnetooptical recording film having a structure comprising: (a) 20-75% of a complex phase in which at least one crystallized iron-group metal is dispersed finely and uniformly in a dendritic, acicular or block form in a proportion of 5-40%, of the total composition, in a matrix of an intermetallic compound of at least one first rare earth metal and at least one iron-group metal; (b) 15-40% of a rare earth metal phase of at least one second rare earth metal; and (c) the remainder being an intermetallic compound phase of a reaction phase of the complex phase and the rare earth metal phase, all percentages being by area, wherein the first and second rare earth metals are the same or different. The target material has such a low permeability that thin magnetooptical recording films can be formed by a magnetron sputtering process with a high utilization.

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Sanda, Japan

Shozo Komiyama