Shin-etsu Handotai Co., Ltd.

Shouzaburo Goto

Kazunori Hagimoto

A substrate for an electronic device, including a nitride semiconductor film formed on a joined substrate including a silicon single crystal, where the joined substrate has a plurality of silicon single crystal substrates that are joined and has a thickness of more than 2000 &#x3bc;m, and the plurality of silicon single crystal substrates are produced by a CZ method and have a resistivity of 0.1 &#x3a9;cm or lower. This provides: a substrate for an electronic device having a nitride semiconductor film formed on a silicon substrate, where the substrate for an electronic device can suppress a warp and can also be used for a product with a high breakdown voltage; and a method for producing the same.

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Chiyoda-ku, Japan

Shouzaburo Goto