Cabot Microelectronics Corporation

Cmc Materials, Inc.

Shoutian Li

Steven Grumbine

Jeffrey Dysard

Pankaj K Singh

Phillip W Carter

William J Ward

Jian Zhang

Francesco De Rege Thesauro

David Schroeder

Ming-Shih Tsai

Robert Vacassy

Jaishankar Kasthuri

The inventive method comprises chemically-mechanically polishing a substrate with an inventive polishing composition comprising a liquid carrier and abrasive particles that have been treated with a compound.

Polishing composition and method utilizing abrasive particles treated with an aminosilane

The invention provides a chemical-mechanical polishing pad comprising a polymeric matrix and 0.1-15 wt. % of metal oxide particles. The polymeric matrix has pores, the metal oxide particles are uniformly distributed throughout the pores, and the metal oxide particles have a specific surface area of about 25 m/g to about 450 m/g. The invention further provides a method of polishing a substrate with the polishing pad.

CMP porous pad with particles in a polymeric matrix

The invention provides methods for planarizing or polishing a metal surface. The method comprises a composition comprising an abrasive, cesium ions, and a liquid carrier comprising water.

Metal cations for initiating polishing

The inventive chemical-mechanical polishing composition comprises a liquid carrier, hydrogen peroxide, benzotriazole, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing composition.

Halide anions for metal removal rate control

The invention provides compositions and methods for planarizing or polishing a substrate. The composition comprises an abrasive, iodate ion, a nitrogen-containing compound selected from the group consisting of a nitrogen-containing Cheterocycle and a Calkylamine, and a liquid carrier comprising water.

Iodate-containing chemical-mechanical polishing compositions and methods

The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.

Compositions for CMP of semiconductor materials

The invention provides a chemical-mechanical polishing composition for polishing a substrate. The polishing composition comprises silica, a compound selected from the group consisting of an amine-substituted silane, a tetraalkylammonium salt, a tetraalkylphosphonium salt, and an imidazolium salt, a carboxylic acid having seven or more carbon atoms, an oxidizing agent that oxidizes a metal, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition.

[object Object]

A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The composition has a pH of at least about 10. The composition is utilized to polish a surface of a tantalum-containing substrate.

Tantalum CMP compositions and methods

The inventive chemical-mechanical polishing system comprises a polishing component, a liquid carrier, an oxidizing agent, and a halogen anion. The inventive method comprises chemically-mechanically polishing a substrate with the polishing system.

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Naperville, IL, United States of America

Shoutian Li