Hitachi, Ltd.

Shousaku Ishihara

Tsuyoshi Fujita

Gyozo Toda

Takashi Kuroki

Naoya Kanda

Hirayoshi Tanei

Shoichi Iwanaga

Kousaku Morita

Fumiyuki Kobayashi

Masahide Okamoto

Masato Nakamura

Norio Sengoku

Fumikazu Tagami

Hitoshi Yokono

Ryohei Satoh

Fusaji Shoji

Nobuhito Katsumura

Yoshiyuki Ohzawa

Madoka Kinoshita

Kiyotaka Wasai

Ceramic circuit substrate which is sintered at 900 to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850 to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and manufacture thereof, ceramic composition for

A multilayer ceramic substrate comprising at least one ceramic layer made by laminating at least one ceramic green sheet layer and conductor layers formed on surfaces of the at least one ceramic green sheet layer into laminates and by sintering the resulting laminates. Each ceramic green sheet layer comprises a ceramic precursor composition comprising (I) 100 parts by weight of ceramic fine powder having an average particle diameter of 10 microns or less as component (C) and (II) 5 to 30 parts by weight, based on 100 parts by weight of the ceramic fine powder, of an organic binder for bonding the ceramic fine powder. The organic binder comprises (i) 100 parts by weight of a water insoluble polymer of at least one vinyl monomer as a major component of the organic binder, as component (A), and (ii) 1 to 9.5 parts by weight, based on 100 parts by weight of the component (A), of water soluble polymer as component (B). In the binder particles of the component (A) being dispersed by the component (B) in an aqueous medium resulting from suspension polymerization of the at least one vinyl monomer in water containing the water soluble polymer as a dispersion stabilizer.

Organic binder for shaping ceramic, its production method and product

Ceramic circuit substrate which is sintered at 900.degree. to 1,050.degree. C. and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing are provided by using a glass with a softening point of 850.degree. to 1,100.degree. C., that is, a glass having a composition included in an area in FIG. 1 (triangular composition diagram of SiO.sub.2 --B.sub.2 O.sub.3 --R.sub.2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively as raw material.

Circuit substrate and electronics computer, using sintered glass ceramics

According to this method for manufacturing a multilayer glass-ceramic circuit board, a green sheet laminate is fired in a non-oxidizing atmosphere in a first firing step so that a void content of at least 10% is maintained and strength of the ceramic laminate is increased. Then the laminate is fired in an oxidizing atmosphere in a second firing step so that the organic binder contained in the laminate is removed and the residual carbon content is at most 200 ppm. Thereafter the laminate is fired in a reducing atmosphere in a third firing step to reduce the oxidized conductor circuit. Finally, the laminate is fired in a non-oxidizing atmosphere in a fourth firing step to densify the ceramic laminate. The firing temperature in the first, second and third steps is 100.degree.-200.degree. C. lower than the softening point of the glass and the firing temperature in the fourth step is higher than the softening point of the glass and lower than the melting point of the conductor.

Method for manufacturing multilayer ceramic substrate

A ceramic substrate for densely integrated semiconductor arrays which is superior in a coefficient of thermal expansion, dielectric constant, strength of metallized bond, and mechanical strength, comprising a sintered body composed essentially of mullite crystals and a non-crystralline binder composed of SiO.sub.2, Al.sub.2 O.sub.3, and MgO, is provided.

Ceramic substrates for microelectronic circuits and process for

The present invention relates to a connector structure for soldering a wiring substrate such as a ceramic wiring substrate to a connector provided on a printed board and also pertains to semiconductor device packages using the same. It is an object of the present invention to provide a connector structure which provides highly reliable electrical connection, together with semiconductor device package using the same. The object is attained by soldering a ceramic wiring substrate to a connector which involves a heater.

Connector and semiconductor device packages employing the same

A ceramic substrate for densely integrated semiconductor arrays which is superior in a coefficient of thermal expansion, dielectric constant, strength of metallized bond, and mechanical strength, comprising a sintered body composed essentially of mullite crystals and a non-crystalline binder composed of SiO.sub.2, Al.sub.2 O.sub.3, and MgO, is provided.

Process for producing ceramic substrates for microelectronic circuits

A ceramic wiring substrate and a process for producing the same having a conductive layer, obtained by sintering a conductive paste comprising 85 to 97% by weight of a tungsten powder and 15 to 3% by weight of a sintering additive (for conductive metal) having a specified composition, on a mullite ceramic substrate.

Ceramic wiring substrate and process for producing the same

An electroconductive molybdenum paste comprising 100 parts by weight of a mixture consisting of 68.0 to 89.2% by weight of molybdenum powders having an average particle size of 0.5 to 10 .mu.m, 10.0 to 27.0% by weight of a solvent, and 0.8 to 5.0% by weight of a binder, 0.5 to 5.0 parts by weight of a gelling agent, and 0.5 to 4.0 parts by weight of a silane coupling agent can firmly fill throughholes of a green sheet without formation of clearances and hollows in the resulting conductors in the throughholes, with better surface roughness of the conductor surfaces in the throughholes, and without development of cracks near the throughholes.

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Chigasaki, Japan

Shousaku Ishihara