Renesas Technology Corp.

Hitachi Ulsi Systems Co., Ltd.

Shouochi Uno

Shuntaro Machida

Kazuo Nojiri

Takashi Yunogami

Takafumi Tokunaga

Kazutami Tago

Atsushi Maekawa

In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric film and includes an organosiloxane as a main component, the recess, such as a trench or hole, is formed by subjecting the organic insulating film to plasma dry etching in a CF-based gas/N/Ar gas in order to suppress the formation of an abnormal shape on the bottom of the recess, upon formation of a photoresist film over the organic insulating film, followed by formation of the recess therein with the photoresist film as an etching mask.

Method of manufacture of semiconductor integrated circuit device and semiconductor integrated circuit device

Method of manufacture of semiconductor integrated circuit

Growing community of inventors

Ome, Japan

Shouochi Uno