Fujitsu Corporation

Shouji Usui

Kazunori Imaoka

Takeshi Matsutani

Kiyomasa Kamei

Taketoshi Inagaki

A semiconductor device includes a semiconductor layer which has a first surface, and a second surface which is comparatively lower than the first surface. The semiconductor device also has a first material layer formed over the second surface, which includes a first inorganic material which has a hardness exceeding that of the semiconductor layer. The semiconductor device also includes a second material layer which has a hardness less than that of the first material layer, and which is formed in a gap between a sidewall of the first material layer and a sidewall between the first and second surfaces. The first surface of the semiconductor layer is formed by lapping until the first surface of the semiconductor layer is impeded by the first material layer so that the first surface of the semiconductor layer is substantially flush with a top surface of the first material layer.

Semiconductor device having SOI substrate and fabrication method thereof

A method for producing a semiconductor device on a semiconductor layer provided on an insulator layer comprises the steps of providing an opening on the semiconductor layer to expose a top surface of the insulator layer, depositing a first material layer that has a hardness exceeding the hardness of the semiconductor layer on the semiconductor layer including the exposed top surface, and patterning the first material layer such that a patterned region of the first inorganic material is left in the opening with a gap separating the patterned region from the side wall of the semiconductor layer. The method also comprises the steps of depositing a second material layer of a second inorganic material having a hardness substantially equal to the hardness of the semiconductor layer such that the second material layer covers the semiconductor layer including the opening wherein the patterned region of the first inorganic material is formed, said second material layer being deposited such that the second material layer covers the side wall of the opening and fills the gap between the side wall of the patterned region and the side wall of the opening, and lapping a top surface of the semiconductor layer that is covered by the second material layer, starting from a top surface of the second material layer and proceeding toward the insulator layer until a top surface of the patterned region of the first inorganic material is exposed.

Growing community of inventors

Tokyo, Japan

Shouji Usui