Hitachi, Ltd.

Hitachi Vlsi Engineering Corp.

Shouji Matsugami

Kanji Otsuka

Takayuki Okinaga

Yuji Shirai

Takashi Emata

Yuuji Shirai

Takashi Miwa

Hiroshi Koguma

Toshihiro Tsuboi

A semiconductor circuit device includes a multi-layered substrate comprising a plurality of signal lines sandwiched between a power source line and a ground line, with insulation layers formed therebetween to reduce fluctuation of a ground line potential at the time of simultaneous switching of the signal lines and to increase the operational speed. The signal lines provides bidirectional current paths and is disposed between the current source line and the ground line. The multi-layered substrate is formed around a semiconductor pellet. Electrode pads are formed on the insulation layer over the ground line on the same level as the signal lines and generally on the same level as the main surface of the semiconductor pellet where electrodes pads are formed. Bonding wires are used to electrically connect the electrode pads on the pellet and the electrodes formed on the insulation layer. Additional bonding wires are used to electrically connect the electrode pads formed on the insulation layer and electrode pads formed on the power source line which is at a higher level and further away from the electrode pads formed on the insulation layer. Some of the electrode pads formed on the insulation layer is directly connected to the ground line using a side plate extension.

Semiconductor integrated circuit device

A semiconductor chip package technology which uses thin film wiring from the chip to the package terminals for increased line density and decreased parasitic capacitance and uses a thin film adhesion layer for improved heat conductivity between the package substrate and its sealing cap. The package uses a thin conductor film deposited along the element mounting surface of a sintered substrate. An adhesion layer, to provide a high quality bond between the sealing cap and substrate, is then deposited on the substrate peripheral area by successively laminating metal and metallized layers, or by depositing a single layer of low metal glass. The adhesion layer is thinner and of larger area than thick film technology, for improved heat conduction.

Semi-conductor device

Growing community of inventors

Akishima, Japan

Shouji Matsugami