Sharp Kabushiki Kaisha Corporation

Shouici Ooyama

Hiroshi Nakatsu

Takahisa Kurahashi

Tetsuroh Murakami

A semiconductor light-emitting device exhibits high reflectance even with less number of pairs of light-reflecting layers, and allows light emitted from the active layer to be effectively extracted outside. This semiconductor light-emitting device is fabricated at good mass productivity by a semiconductor light-emitting device manufacturing method including the step of providing an active layer which generates light having a specified wavelength on a semiconductor substrate. On the semiconductor substrate, are stacked an Al Ga As layer and the active layer, in this order. Part of the Al Ga As layer with respect to the is changed into an AlO layer (where y is a positive real number).

Growing community of inventors

Ikoma-gun, Japan

Shouici Ooyama