Tokyo Electron Limited

Shouichi Terada

Tsuyoshi Mizuno

Takeshi Uehara

Hiroshi Shinya

Yukihiro Wakamoto

Makoto Muramatsu

Gen You

Nobuyuki Sata

Takanori Nishi

Hiroyuki Fujii

In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.

Substrate treatment apparatus and substrate treatment method

In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.

Substrate processing apparatus and substrate processing method

In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.

Substrate processing method and computer storage medium

It is an object to provide a method for forming a thin film having a uniform thickness so as to follow asperities of a surface of a wafer to be processed and to provide a film-forming device used for the method. The film-forming device includes a treatment chamber for receiving a wafer and isolating the wafer from the air; a solvent-gas-supplying portion for supplying a solvent gas into the treatment chamber; a chuck for rotatably holding the wafer so that the downward-facing surface of the substrate is the surface on which a thin film is formed; a coating-solution-supplying portion for supplying a coating solution as a mist of charged particles toward the surface of the wafer; and a charging portion for charging the wafer with an electrical potential opposite to the charge of the particles.

Method for forming thin film and film-forming device

In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.

Substrate processing method and program

It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.

The present invention is a planarization apparatus for planarizing a coating film applied on a substrate before the coating film is hardened, including a contact body such as a brush or sponge brought into contact with a front surface of the coating film on the substrate; and a contact body drive mechanism for pressing the contact body against the front surface of the coating film and moving the contact body along the front surface of the coating film. The contact body is pressed against the coating film before it is hardened, and moved along the front surface of the coating film, whereby the coating film can be planarized to a predetermined film thickness. According to the present invention, the coating film can be planarized without using the CMP apparatus.

Planarization apparatus

In a liquid processing apparatus a spin chuck holds a wafer having a surface supplied with a liquid to be applied through a nozzle receiving the liquid through a feed path and whether the liquid passing through the feed path has fluctuation is detected by a fluctuation detection device. Thus the liquid's condition in the feed path can be determined significantly accurately. Supplying the substrate with the liquid without fluctuation allows the substrate to receive the liquid in an optimal condition. A satisfactory liquid process can thus be performed.

Liquid processing apparatus processing a substrate surface with a processing liquid, liquid processing method, and liquid condition detection apparatus detecting fluctuation of the processing liquid

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Koshi, Japan

Shouichi Terada