Matsushita Electronics Corporation

Shouichi Takasuka

Hideyuki Nakanishi

Akio Yoshikawa

Shin-ichi Ijima

A semiconductor laser device includes a semiconductor laser element for emitting laser light onto a recording medium; beam dividing element provided in an optical path between the semiconductor laser element and the recording medium; a hologram optical element including a diffraction grating formed in a light-transmitting substrate, the hologram optical element located in an optical path between the beam dividing element and the semiconductor laser element; a servo-signal light-receiving element provided in an optical path of diffracted light transmitted through the diffraction grating for receiving the diffracted light; an information-signal light-receiving element for receiving light divided by the beam-dividing element, which is different from light divided by the beam-dividing element which is received by the diffraction grating; and a polarizing element provided in an optical path between the beam dividing element and the information-signal light-receiving element, wherein the semiconductor laser element, the servo-signal light-receiving element and the information-signal light-receiving element are provided within a single package, and the information-signal light-receiving element is provided outside an optical path of every order of diffracted light transmitted through the diffraction grating.

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Osaka, Japan

Shouichi Takasuka