Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Shouichi Takasuka

Isao Kidoguchi

Toru Takayama

Masayuki Ono

Masahiro Kume

Tomoya Satoh

Takeshi Yokoyama

Hiroyuki Ishida

Toshihiro Kuroda

Makoto Atoji

Kouji Ise

A semiconductor light emitting device includes a first conductive clad layer that is group III-V semiconductor mixed crystal, an active layer, and a second conductive clad layer. The second conductive clad layer has a laminated structure of at least three layers including a first layer, a second layer, and a third layer disposed in this order closer to the active layer. The second layer and the third layer are included in a striped ridge, and the second layer is positioned at a skirt of the ridge. The surface of the first layer is a flat part at both sides of the ridge. When Al compositions of the first layer, second layer, and third layer are X1, X2, and X3, respectively, the relation X2&#x3e;X1, X3 is satisfied. When film thicknesses of the first layer, second layer, and third layer are D1, D2, and D3, the relation D2&#x3c;D3 is satisfied.

Semiconductor light emitting device and method for manufacturing same

In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element.

Dual-wavelength semiconductor laser device and method for fabricating the same

A semiconductor laser device includes: a semiconductor laser chip which is composed of a semiconductor substrate and a plurality of semiconductor layers stacked on an element formation face of the semiconductor substrate and which outputs an irradiation light for irradiating an optical disk; and a light receiving element which receives the irradiation light reflected by the optical disk as a feedback light. The semiconductor laser chip includes on one face thereof an electrode facing an optical element and is fixed in a package so that at least one of sub-beams reflected by the optical disk is incident on the one face. A chip exposing portion for exposing a region of the one face where the sub-beam is incident is formed in the electrode.

Semiconductor laser device and optical pickup device

An optical pick-up apparatus includes: a semiconductor laser light source that generates an optical beam; a diffraction grating that divides the optical beam into a main beam and side beams; an optical element that guides the main beam and the side beams that are generated by the diffraction grating onto an optical information medium; and a photodetector that detects a signal from reflected light reflected from the optical information medium. The semiconductor laser light source is configured with a 2-wavelength semiconductor laser device in which a semiconductor laser chip that generates an optical beam having a wavelength of &#x3bb;and a semiconductor laser chip that generates an optical beam having a wavelength of &#x3bb;are integrated into one chip or are arranged in proximity to each other. The diffraction grating has one grating period &#x39b; by which each of the optical beams having the wavelength &#x3bb;and the optical beam having the wavelength &#x3bb;, which are generated by the 2-wavelength semiconductor laser device, is divided into a main beam and side beams. The apparatus is applicable to two kinds of optical information media having different track pitches.

Optical pick-up apparatus

Growing community of inventors

Hyogo, Japan

Shouichi Takasuka