Nec Lcd Technologies, Ltd.

Nec Corporation

Shouichi Kuroha

Shigeru Kimura

Shinichi Nakata

Satoshi Ihida

Hiroyuki Uchida

Michiaki Sakamoto

Hiroaki Tanaka

Takahiko Watanabe

Mamoru Okamoto

Kazushige Takechi

Tsutomu Hamada

Akitoshi Maeda

Shusaku Kido

Hirofumi Ihara

Takasuke Hayase

Satoshi Doi

Masanobu Hidehira

Tae Yoshikawa

Toshihiko Harano

Hisanobu Shimodouzono

Shinichi Nishida

Makoto Watanabe

Yuji Yamamoto

Takayuki Ishino

Takahisa Hannuki

Fuminori Tamura

Yoshitaka Horie

Shunsuke Shiga

Ryuji Takahashi

Satoshi Miura

In an active matrix type liquid crystal display device comprising a TFT having gate lines and data lines formed in a matrix manner and being connected to a source line, a contact hole for connecting the source line with a pixel electrode is formed in a position overlapping a disclination line. The contact hole is formed in a position overlapping a capacitance portion of the gate line. The gate line and the source line are provided to oppose to each other, and electrostatic capacitance is stored therebetween.

Liquid crystal display device and its manufacturing method

The present invention provides a liquid crystal display apparatus of a lateral direction electric field drive type comprising an array substrate including a plurality of TFTs each having a gate electrode, a gate insulation film, a semiconductor layer, and a source electrode/drain electrode formed on a transparent substrate and an opposing substrate arrange so as to oppose to the array substrate, wherein the semiconductor layer has a width in the gate length direction identical to the gate length.

Liquid crystal display apparatus of a lateral direction electric field drive type

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and namorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the namorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Active matrix substrate plate and manufacturing method therefor

A liquid crystal display device is made up of a TFT substrate, an opposed substrate and a liquid crystal layer arranged between these substrates, in which the TFT substrate is provided with gate lines, data lines and TFT on its transparent insulative substrate, in addition, a passivation film is provided so as to cover them. A color filter is provided on the passivation film, and a black matrix is provided at corresponding area to above part of the TFT and to above part of the data line on the color filter. In addition, a first overcoat layer with film thickness of degree of 1 to 3 &mgr;m is provided so as to cover the black matrix. Further, a second overcoat layer with film thickness of approximate 0.5 &mgr;m is provided at the whole surface except for a contact hole. Furthermore, a pixel electrode is provided on pixel formation area on the second overcoat layer.

Active-matrix type liquid crystal display device having thick and thin overcoat layers layered over a black matrix

An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step , the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step , the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step , the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n amorphous silicon layer of the channel gap is removed by etching. In step , the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Manufacturing method of active matrix substrate plate and manufacturing method therefor

A thin film transistor is designed in such a manner that a semiconductor region includes source and drain electrodes in a channel width direction and further, a planar source-side overlap area constructed by a gate electrode, the source electrode and the semiconductor region and a planar drain-side overlap area constructed by the gate electrode, the drain electrode and the semiconductor region exist. An optimal overlap length of one of the source-side and drain-side overlap areas in a channel length direction is determined, for instance, to be 4 &mgr;m, for a light incident on a channel portion of the thin film transistor to have a light intensity below or equal to 0.2% of a light intensity of the backlight incident toward the thin film transistor, thereby reducing a light-induced OFF leak current sufficiently and further improving flickering and display uniformity.

Active matrix liquid crystal display device having reduced leak current and switching element used therein

Growing community of inventors

Tokyo, Japan

Shouichi Kuroha