Mitsubishi Materials Corporation

Solar Frontier K.k.

Shoubin Zhang

Masahiro Shoji

Keita Umemoto

Akifumi Mishima

Shozo Komiyama

Yoshinori Shirai

Hayato Sasaki

Akihiro Higami

Yusuke Watarai

Akio Minakuchi

Tadashi Kobayashi

Sawako Takeuchi

Yuya Mutsuda

Gou Yamaguchi

Yuichi Kondou

The present invention provides a sputtering target having a composition containing 45 at % to 90 at % of In, and the remainder including Cu and inevitable impurities. An In single phase and a CuIncompound phase exist, and an XRD peak ratio I(In)/I(CuIn) between the In single phase and the CuIncompound phase is in a range of 0.01 to 3. The average grain size of the CuIncompound phase is 150 &#x3bc;m or less, the amount of oxygen is 500 mass ppm or less, and the theoretical density ratio is 85% or more.

Sputtering target and method for producing sputtering target

A Cu&#x2014;Ga binary alloy sputtering target having excellent mechanical workability, high density, and high bending strength, and a method of producing the sputtering target are provided. The sputtering target has a composition including 28 to 35 atomic % of Ga and the balance made of Cu and inevitable impurities. In addition, the sputtering target has a coexistence microstructure in which a low-Ga-containing Cu&#x2014;Ga binary alloy phase is surrounded by a high-Ga-containing Cu&#x2014;Ga binary alloy phase. The low-Ga-containing Cu&#x2014;Ga binary alloy phase includes 26 atomic % or less of Ga and a balance made of Cu. The high-Ga-containing Cu&#x2014;Ga binary alloy phase includes 28 atomic % or more of Ga.

Cu&#x2014;Ga binary alloy sputtering target and method of producing the same

Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 15 to 40 at % of Ga, 0.1 to 5 at % of Bi, and the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target. The method for producing the sputtering target includes a step of melting at least Cu, Ga and Bi as simple substances or an alloy that contains two or more of these elements at 1,050&#xb0; C. or higher to produce an ingot.

Sputtering target and method for producing same

A sputtering target consists of a sintered body having a component composition consisting of: Ga of 10 to 40 at. % and Na of 0.1 to 15 at. % as metal elements; and the balance being Cu and inevitable impurities. The sintered body contains the Na in a form of Na compounds consisting of at least one compound selected from the group consisting of sodium sulfate, sodium sulfite, sodium selenate, and sodium selenite, the sintered body has a composition in which a Na compound phase is dispersed, and an average grain size of the Na compound phase is 10 &#x3bc;m or less.

Sputtering target and production method of the same

Provided are a sputtering target that is capable of forming a Cu&#x2014;Ga film, which has an added Ga concentration of 1 to 40 at % and into which Na is well added, by a sputtering method and a method for producing the sputtering target. The sputtering target has a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element components other than F, S and Se, and the balance composed of Cu and unavoidable impurities. The sputtering target contains Na in at least one form selected from among sodium fluoride, sodium sulfide, and sodium selenide, and has a content of oxygen of from 100 to 1,000 ppm.

Provided is a sputtering target which contains Na in high concentration and, despite this, is inhibited from discoloration, generating spots, and causing abnormal electrical discharge and which has high strength and rarely breaks. Also provided is a method for producing the sputtering target. The sputtering target has a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities, wherein the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide. The sputtering target has a theoretical density ratio of 90% or higher, a flexural strength of 100 N/mmor higher, and a bulk resistivity of 1 m&#x3a9;&#xb7;cm or less. The number of 0.05 mmor larger aggregates of the at least one of sodium fluoride, sodium sulfide, and sodium selenide present per cmarea of the target surface is 1 or less on average.

Provided are a sputtering target which has excellent machinability and is capable of forming a compound film that mainly contains Cu and Ga and a method for producing the sputtering target. The sputtering target of the present invention has a component composition that contains 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance composed of Cu and unavoidable impurities. A method for producing the sputtering target includes a step of producing a starting material powder that is obtained by pulverizing at least Cu, Ga and Sb as simple substances or an alloy that contains two or more of these elements; and a step of subjecting the starting material powder to hot processing in a vacuum, in an inert atmosphere or in a reducing atmosphere, wherein Ga is contained in the starting material powder in the form of a Cu&#x2014;Ga alloy or in the form of a Ga&#x2014;Sb alloy.

[Problems to be Solved] To provide a sputtering target that is capable of forming a Cu&#x2014;Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means to Solve the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga, 0.05 to 2 at % of Na, and 0.025 to 1.0 at % of S are contained and a remaining portion has a component composition consisting of Cu and unavoidable impurities. Also, a method for producing the sputtering target includes the step of hot pressing a mixed powder of NaS powder and Cu&#x2014;Ga alloy powder or a mixed powder of NaS powder, Cu&#x2014;Ga alloy powder, and pure Cu powder in a vacuum atmosphere or an inert gas atmosphere or sintering a mixed powder of NaS powder and Cu&#x2014;Ga alloy powder or a mixed powder of NaS powder, Cu&#x2014;Ga alloy powder, and pure Cu powder by hot isostatic pressing.

[Problems] To provide a sputtering target that is capable of forming a Cu&#x2014;Ga film to which Na is favorably added by a sputtering method, and a method for producing the same. [Means for Solving the Problems] The sputtering target is provided wherein 20 to 40 at % of Ga and 0.05 to 1 at % of Na are contained as metal components except fluorine (F) of the sputtering target, a remaining portion has a component composition consisting of Cu and unavoidable impurities, and Na is contained in the state of a NaF compound. Also, a method for producing the sputtering target includes the steps of forming a molded article consisting of a mixed powder of NaF powder and Cu&#x2014;Ga powder or a mixed powder of NaF powder, Cu&#x2014;Ga powder, and Cu powder; and sintering the molded article in a vacuum atmosphere, an inert gas atmosphere, or a reducing atmosphere.

Sputtering target and method for producing the same

A sputtering target for forming a ZrO&#x2014;InObased protective film for an optical storage medium, has a component composition made of ZrInAOwhere 'A' represents one, two, or more of Si, Cr, Al, Ce, Ti, and Sn, 'a' represents an amount greater than 5 atomic percent and less than 23 atomic percent, &#x201c;b&#x201d; represents an amount greater than 12 atomic percent and less than 35 atomic percent, and &#x201c;c&#x201d; represents an amount greater than 0 and less than 30 atomic percent, wherein 90% or more of Zr that is included in the sputtering target for forming the protective film for the optical storage medium is in an oxidative product phase in which Zr and In are combined, and is dispersed in a base material of the target.

[object Object]

A high-strength sputtering target for forming a protective film for an optical recording medium, obtained by sintering a mixed powder containing, in mol %, 10 to 70% of a zirconium oxide or hafnium oxide and 50% or less (over 0%) of silicon dioxide, and 0.1 to 8.4% of yttrium oxide as necessary, and the remainder containing aluminum oxide, lanthanum oxide, or indium oxide and inevitable impurities, wherein a complex oxide phase of AlSiO, LaSiO, or InSiOis formed in a base of the target.

High-strength sputtering target for forming protective film for optical recording medium

Provided is a sputtering target for forming a phosphor film in an electroluminescence element, which can maintain high strength even when it is allowed to stand in the atmosphere for a long time. The target has a chemical composition of Al: 20 to 50 mass %, Eu: 1 to 10 mass %, and the remainder containing Ba and inevitable impurities, and has a structure wherein Ba in which Eu is solid-solubilized and Al form an intermetallic compound phase, wherein the intermetallic compound phase of Ba in which Eu is solid-solubilized and Al includes a BaAlintermetallic compound phase and a BaAlintermetallic compound phase, and Eu forms a solid solution with Ba in the BaAlintermetallic compound and in the BaAlintermetallic compound, respectively.

High strength sputtering target for forming phosphor film in electroluminescence element

The present invention provides a lithium ion polymer battery comprising an electrode having excellent adhesion and electrical conductivity between a current collector and an active material layer, cycle capacity maintaining characteristics being improved, wherein a bonding layer, which bonds the current collector to the active material layer, is stable to an organic solvent in an electrolytic solution and is excellent in storage stability, and also, it is made possible to suppress the corrosion of the current collector by a strong acid such as hydrofluoric acid generated in the battery.

Growing community of inventors

Sanda, Japan

Shoubin Zhang