Taiwan Semiconductor Manufacturing Comp. Ltd.

Shou-Wei Lee

Tai-I Yang

Po-Tao Chu

Kun-Ming Huang

Hong-Seng Shue

Shao-Chi Yu

A high-voltage super junction device is disclosed. The device includes a semiconductor substrate region having a first conductivity type and having neighboring trenches disposed therein. The neighboring trenches each have trench sidewalls and a trench bottom surface. A region having a second conductivity type is disposed in or adjacent to a trench and meets the semiconductor substrate region at a p-n junction. A gate electrode is formed on the semiconductor substrate region and is electrically isolated from the semiconductor substrate region by a gate dielectric. A body region having the second conductivity type is disposed on opposite sides of the gate electrode near a surface of the semiconductor substrate. A source region having the first conductivity type is disposed within in the body region on opposite sides of the gate electrode near the surface of the semiconductor substrate.

Growing community of inventors

Hsinchu, Taiwan

Shou-Wei Lee