Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Beijing Funate Innovation Technology Co., Ltd.

Leland Stanford Junior University

Hon Hai Precision Co., Ltd

Funate Innovation Technology Co. Ltd.

Shou-Shan Fan

Kai-Li Jiang

Yang Wei

Liang Liu

Qun-Qing Li

Peng Liu

Chang-Hong Liu

Yuan-Hao Jin

Jia-Ping Wang

Guo-Fan Jin

Jun Zhu

Chen Feng

Zhen-Dong Zhu

Lin Xiao

Kai Liu

Li Qian

Zhuo Chen

Xiao-Yang Lin

Duan-Liang Zhou

Li-Hui Zhang

Pi-Jin Chen

Mo Chen

Yang Wu

Jie Tang

Chun-Hai Zhang

Bing-Chu Du

Jiang-Tao Wang

Jin Zhang

Li-Na Zhang

Cai-Lin Guo

Yuan-Chao Yang

Qing-Yu Zhao

Dong-Qi Li

Zhao-Fu Hu

Guang Wang

Hao-Su Zhang

Dong An

Wen-Yun Wu

Guan-Hong Li

Tong Yang

Ying-Cheng Wang

Lu-Zhuo Chen

Wen Ning

Ga-Lane Chen

Hao-Ming Wei

Yu-Jun He

Xiao-Yang Xiao

Ying-Hui Sun

Wei Zhao

Hua Yin Huang

Hai-Yan Hao

Lei-Mei Sheng

Ke Fei Wang

Ke Zhang

Xin-He Wang

Chun-Hua Hu

Shu Luo

Jia-Shyong Cheng

Qi Cai

Wei-Qi Fu

Ling Zhang

Tian-Fu Zhang

He Ma

Yu-Quan Wang

I-Wei Wu

Yuan Yao

Jung-An Cheng

Chang-Ting Lin

Jeah-Sheng Wu

Liang-Neng Chien

Yu-Dan Zhao

Xue-Wei Guo

Lin Cong

Caesar Chen

Li Sun

Yang Yu

Guo Chen

Qiang Li

Feng Drake Zhu

Wei Wei

Ying-Bai Yan

Xing Zhang

Hao Jia Li

Jian Wang

Lei Deng

Lei Huang

Hongjie Dai

Lei Li

Peng Li

Feng Gao

Wei Xiong

Zhou Chen

Shuai Liu

Wen-Mei Zhao

Ke Wang

Hsien-Sheng Pei

Chang-Shen Chang

Wei Ying Yu

The present application provides a logic gate device. The logic gate device includes a gate electrode, a gate insulating layer, a bottom electrode, a two-dimensional semiconductor layer, a first top electrode and a second electrode. The gate insulating layer is located on the gate electrode. The bottom electrode is located on the gate insulating layer. The two-dimensional semiconductor layer is located on the bottom electrode and simultaneously covers the gate insulating layer. The first top electrode and the second electrode are located on the two-dimensional semiconductor layer. The bottom electrode, the two-dimensional semiconductor layer and the gate insulating layer form an air gap, and the air gap is distributed at both sides of the bottom electrode. The gate electrode is configured to connect a gate voltage, and the first top electrode and the second top electrode are configured to connect a signal input terminal.

Logic gate device

The present invention relates to a Fourier transform spectrometer applicable in an array of coherent light sources, comprising: a light source, a light transmission device, a control circuit, a detector, an amplifying circuit, and a computer. The control circuit is electrically connected to the light transmission device for control the on-off of light in the light transmission device. The amplifying circuit is connected with the detector for recording and amplifying the photoelectric signal obtained by the detector. The computer is connected with the amplifying circuit. The computer is equipped with a spectral analysis software is used to perform Fourier transform. The Fourier transform spectrometer based on the coherent light source array further includes a coherent light source array. The light transmission device is used to transmit the light emitted by the light source to the coherent light source array.

Fourier transform spectrometer applicable in an array of coherent light sources

A method of making a carbon nanotube composite hydrogen evolution catalytic film is provided. The method includes: providing a carbon nanotube film, wherein the carbon nanotube film defines a plurality of spaced holes; providing a precursor solution containing a molybdenum source and a carbon source, and placing the precursor solution on the carbon nanotube film and drying to obtain a precursor film; and energizing the precursor film.

Carbon nanotube composite hydrogen evolution catalytic film and method for making the same

An infrared stealth cloth includes a cloth substrate and an infrared light absorber located on the cloth substrate. The infrared light absorber includes a plurality of carbon nanotubes entangled with each other to form a network structure and a plurality of carbon particles in the network structure.

Infrared stealth cloth and infrared stealth clothes

A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

Tunneling transistor

The present invention relates to a carbon nanotube-transition metal oxide composite and a method for making the composite. The composite comprises at least one carbon nanotube and a plurality of transition metal oxide nanoparticles. The plurality of transition metal oxide nanoparticles are chemically bonded to the at least one carbon nanotube through carbon-oxygen-metal (C—O-M) linkages, wherein the metal is a transition metal element. The method for making the composite comprising the following steps: stepproviding at least one carbon nanotube obtained from a super-aligned carbon nanotube array; steppre-oxidizing the at least one carbon nanotube; stepdispersing the at least one carbon nanotube in a solvent to form a first suspension; stepdispersing a material containing transition metal oxyacid radicals in the first suspension to form a second suspension; and stepremoving the solvent from the second suspension and drying the second suspension.

Carbon nanotube-transition metal oxide composite and method for making the same

The present application relates to a method for designing a nonsymmetric freeform surface optical system, and the method including the following steps establishing an initial plane system. The initial plane system is consistent with the expected system structure, but there is no focal power in the initial plane system. The image plane tilt angle of the initial plane system is defined as θ. The point-by-point method is used to calculate the coordinates and normal vectors of the data points used to construct the freeform surface. The iterative optical system is obtained by iteration; and the iterative optical system is optimized.

Method for designing nonsymmetric freeform surface optical system

An infrared detector includes a thermoelectric element, an infrared light absorber located on the thermoelectric element, and an electrical signal detecting element. The infrared light absorber includes a plurality of carbon nanotubes entangled with each other to form a network structure and a plurality of carbon particles in the network structure. The electrical signal detecting element is configured to detect a change of an electrical signal of the thermoelectric element.

Infrared detector and infrared imager

A solid electrolyte three-electrode electrochemical test device comprises a housing, a working electrode, a counter electrode, a reference electrode, a first conductive structure, a second conductive structure, a third conductive structure, and a solid electrolyte layer. The housing comprises a groove and a first through hole located at a bottom of the groove. The reference electrode is insulated from the counter electrode. The first conductive structure and the working electrode are stacked with each other, and the working electrode and at least a part of the first conductive structure are located in the first through hole. The solid electrolyte layer, the counter electrode, the reference electrode, the second conductive structure and the third conductive structure are located in the groove, and the first conductive structure, the working electrode, the solid electrolyte layer, the counter electrode, and the second conductive structure are sequentially stacked and located coaxially with each other.

Solid electrolyte three electrode electrochemical test device

A carbon nanotube composite structure includes a carbon nanotube and a film-like structure. The carbon nanotube includes a p-type portion and an n-type portion. The film-like structure is a molybdenum disulfide film or a tungsten disulfide film, and the film-like structure covers the n-type portion.

Carbon nanotube composite structure

A method of preparing a lithium-ion battery electrode, S, preparing a carbon nanotube raw material; S, providing an electrode active material and a solvent; S, mixing the carbon nanotube raw material and the electrode active material with the solvent to form a mixture, and stirring the mixture to form an electrode mixture; and S, spraying the electrode mixture on a substrate to form an electrode layer, and removing the substrate and drying the electrode layer to form the lithium-ion battery electrode.

Prepatation method and prepatation device of lithium-ion battery electrode

A method for making a graphene nanoribbon composite structure includes providing a substrate including a plurality of protrusions spaced apart from each other. A graphene film is grown on a growth substrate, an adhesive layer is on a surface of the graphene film away from the growth substrate. After removing the growth substrate, the graphene film and the adhesive layer are cleaned with water or an organic solvent. The graphene film, the adhesive layer, and the substrate are combined and then are dried, so that a plurality of wrinkles are formed near the plurality of protrusions. The adhesive layer is removed, and after etching a surface of the graphene film away from the substrate, the graphene films except for the plurality of wrinkles are removed, to form a plurality of graphene nanoribbons.

Graphene nanoribbon composite structure and method for making the same

A method for processing scanning electron microscope specimen is provided. The method comprises: providing a specimen to be observed; providing a carbon nanotube array comprising a plurality of carbon nanotubes; and pulling a carbon nanotube film from the carbon nanotube array, and laying the carbon nanotube film on a surface of the specimen, wherein the carbon nanotube film comprising a plurality of through holes.

Carbon nanotube device

A thin film transistor includes a gate electrode, a gate insulating layer, a carbon nanotube structure, a source electrode and a drain electrode. The gate insulating layer is located on the gate electrode. The carbon nanotube structure is located on the gate insulating layer. The source electrode and the drain electrode are arranged at intervals and electrically connected to the carbon nanotube structure respectively. The thin film transistor further includes an interface charge layer, and the interface charge layer is located between the carbon nanotube structure and the gate insulating layer.

Thin film transistor and filter using thin film transistor

A torsion balance is provided which includes a twisting wire and a reflector. The twisting wire is a suspended carbon nanotube. The reflector is hung on the twisting wire. The reflector further includes a film, a first reflecting layer, and a second reflecting layer; and the film includes a first surface and a second surface opposite to the first surface, and the first reflecting layer is located on the first surface and the second reflecting layer is located on the second surface.

Torsion balance and method for making the same

Growing community of inventors

Beijing, China

Shou-Shan Fan