China Triumph International Engineering Co., Ltd.

Ctf Solar Gmbh

China Thumph International Engineering Co., Ltd.

Smit Thermal Solutions B.v.

China Triumpf International Engineering Co. Ltd.

Shou Peng

Bastian Siepchen

Michael Harr

Xinjian Yin

Krishnakumar Velappan

Christian Drost

Ganhua Fu

Rui Liu

Ming Cheng

Bettina Späth

Wei Zhang

Yuan Liu

Xing Yi

Xin Cao

Wei Hong

Peiguang Yang

Honghan Ding

Christian Kraft

Daniele Menossi

Liyun Ma

Marcel Mischke

Zhizhong Liao

Stefan Rau

Xiaojiang Chen

Yonghui Liu

Jianqing Wang

Wanchun Tian

Qiang Gao

Youle Wang

Lifen Shi

Jiedong Cui

Sven Frauenstein

Tobias Kiesewetter

Hilmar Richter

Gerard Kaper

Wiro Zijlmans

Bettina Spaeth

The present invention proposes a method to form a double-graded CdSeTe thin film. The method comprises providing a base substrate, forming a first CdSeTelayer having a first amount wof selenium in it, forming a second CdSeTelayer having a second amount wof selenium in it and forming a third CdSeTelayer having a third amount wof selenium in it. The second amount wlies in the range between 0.25 and 0.4, whereas each of the amounts wand wlies in the range extending from 0 to 1. According to the present invention, the energy gap in the first and the third CdSeTelayers is equal to or higher than 1.45 eV and the energy gap in the second CdSeTelayer lies in the range between 1.38 eV and 1.45 eV and is smaller than the energy gap in the first and the third CdSeTelayers.

Method for producing a double graded CdSeTe thin film structure

The present invention relates to a method and an apparatus for determining the position of a substrate within a closed chamber, wherein the substrate is moved within the chamber by a transport system comprising at least one rotating shaft. A load-converting element is provided adjacent to at least one of the rotating shafts, wherein the load-converting element detects a load acting on the at least one rotating shaft and converts it into an electrical parameter. While no substrate is present on the at least one rotating shaft, a first output signal corresponding to a first value of the electrical parameter is measured. The output signal is then monitored and a presence of the substrate on the at least one rotating shaft is detected when the output signal differs from the first output signal by at least a predetermined amount.

Method for determining a substrate position in a closed chamber and apparatus for performing the method

An avoidance conveying device and an avoidance conveying method are provided. The device includes a receiving device, a front lifting device, a transition device, a rear lifting device, and a sending device arranged in sequence along a direction of conveying glass sheets; the receiving device receives the glass sheets conveyed by a front roller conveyor of an original sheet production line; the sending device conveys the glass sheets to a rear roller conveyor of the original sheet production line; an avoidance channel is formed between the front lifting device and the rear lifting device. Pedestrians and forklifts directly pass through the glass production line at any time through the avoidance channel, shortening the travel distance and the travel duration of pedestrians and forklifts. The glass sheets are finally conveyed to the rear roller conveyor by bypassing the avoidance channel, which ensures continuous and uninterrupted transportation of the glass sheets.

Avoidance conveying device and method for glass production line

Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.

Thin film device with additional conductive lines and method for producing it

The subject of this invention is a method for testing the data and control interface of individual machines intended for interconnection in an inline system for solar cell production. Furthermore, an Interface-Tester suitable for executing the testing method is disclosed. The method for testing comprises the steps of feeding a dummy workpiece to the tested machine and connecting the interface tester to the standard interface of the machine. Consecutively the interface tester sends controlling signals to the machine and receives the signals from the tested machine. The received signals are compared to reference signals and evaluated. The interface tester comprises a standard interface for coupling the machines in an inline system for solar cell production. Furthermore, the interface tester is equipped with at least one CPU, a volatile and/or non-volatile memory, communication modules, couplers and connectors and at least one human-machine interface.

Method for testing a standard interface and interface-tester

The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.

Method to deposit thin film high quality absorber layer

An isothermal drop speed cooling method and an apparatus for same. A glass ribbon carried with glass passes through the forced convection area of the glass annealing lehr, and the glass ribbon is moving while the glass is being air-cooled in the forced convection area. The glass is air-cooled by different air volume according to the temperature of the glass, so that the glass is allowed to be cooled at isothermal drop speed during the moving process of the glass. According to the cooling method and apparatus, the specification size of the opening section of multi-row air nozzles longitudinally arranged is increased along the moving direction of the glass ribbon, so that the cooling air volume from the front to the rear can be gradually increased, thereby allowing the temperature drop speed of a glass plate to be uniform from the front to the rear.

Isothermal drop speed cooling method of forced convection area for lehr and the apparatus thereof

The present invention describes a method for producing CdTe thin-film solar cells, in which special parameters of different processing steps and a special sequence of processing steps result in improved characteristics of the produced CdTe solar cells.

Method for producing a CdTe thin-film solar cell

A pink aluminosilicate glass, comprising: a glass former, a network intermediate oxide, a network modifier oxide, a network former oxide, a network modifier, a colorant and a clarificant, wherein the glass former is SiO, the network modifier oxide is CaO, MgO, KO and NaO, the network former oxide is BO, and the network modifier is ZrOand SrO. This glass is pink in visible light, has a good visual effect, and has a relatively high thermal stability, and can improve the usage safety in harsh working environments.

Pink aluminosilicate glass

A main drive control method for glass factories, comprising the following steps: (a) providing a first circuit breaker and a second circuit breaker on a power supply loop of an electrical motor, wherein one end thereof is respectively connected to two main drive electrical motors; (b) enabling the first circuit breaker to be connected to a municipal power supply and the second circuit breaker to be connected to a UPS power supply; and (c) enabling the first circuit breaker and the second circuit breaker to be interlocked via a mechanical interlocking mechanism, so that only one of the circuit breakers can be switched on during a normal operation. The main drive control method for glass factories solves the problem that the rotation speed of a main drive electrical motor is incorrect due to the interference on a signal.

Main drive control method for glass factories

A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdClactivation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.

Method for producing thin-film solar cells

The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer thickness. The method according to the present invention is an efficient way to prevent shunting of the solar cells, to improve reliability and long-term stability of the solar cells and to provide a uniform doping of the CdTe layer. This is achieved by applying a sacrificial doping layer between a first CdTe layer having large grains and a second CdTe layer having small grains, which together form the CdTe layer of the solar cells. Furthermore it provides the possibility to eliminate the CdClactivation treatment step in case the sacrificial doping layer comprises a halogen.

Method of manufacturing thin-film solar cells with a p-type CdTe layer

The present invention concerns a method for the manufacture of the first layer of a back contact layer for thin-layer solar cells in superstrate configuration. In the prior art, this layer is deposited as a compound, for example as a layer of SbTe. In accordance with the invention, however, a tellurium-rich surface layer of the cadmium telluride layer is produced, on which a first material is deposited which is capable of forming an electrically conductive second material with tellurium and of producing the second material by reaction of the first material and tellurium in the surface layer. The second material forms the first layer of the back contact layer.

Method for producing the rear contact layer for CdTe thin-film solar cells

The invention relates to a method for conditioning the CdTe layer of CdTe thin-film solar cells without the use of CdCl2. Calcium tetrachlorozincate (CaZnCl4) is to be used instead of CdCl2 for activation, and the process parameters that have proven themselves over time are to be kept. The method involves the activation of the CdTe layer of semi-finished thin-film CdTe solar cells; calcium tetrachlorozincate is applied to the CdTe layer () and the semi-finished thin-film CdTe solar cell subsequently undergoes a heat treatment. The calcium tetrachlorozincate layer is preferably applied via methods from the prior art, for instance roller coating with an aqueous or methanolic salt solution, spraying on an aqueous or methanolic salt solution, an aerosol coating or a dipping bath.

Method of conditioning the CdTe layer of CdTe thin-film solar cells

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Shanghai, China

Shou Peng