Seiko Epson Corporation

Shotaro Izawa

Satoshi Ito

Shota Iizuka

An optical substrate includes a first substrate, a light-transmitting layer disposed at the first substrate, concave portions provided in the light-transmitting layer, and a lens layer disposed so as to fill the concave portions. The light-transmitting layer is constituted by a plurality of light-transmitting layers, and an edge of the concave portion is in contact with an edge of an adjacent concave portion adjacent to the concave portion.

Optical substrate, electro-optical device, electronic apparatus, and method for manufacturing optical substrate

An electro-optical device, which includes a display area and a peripheral area, includes a transmissive base member, a plurality of pixel electrodes, a transmissive lens layer having a plurality of lenses disposed corresponding to the plurality of pixel electrodes, an insulating layer disposed between the transmissive base member and the transmissive lens layer, and a light-shielding film disposed between the transmissive base member and the insulating layer, and having a light-shielding property. The insulating layer has a contact surface in contact with the transmissive lens layer, and has a refractive index different from a refractive index of the transmissive lens layer. The contact surface has a first surface located in the display area, and a second surface located in the peripheral area. The first surface has a plurality of first recessed portions disposed corresponding to the plurality of lenses, and the second surface has one or more second recessed portions.

Electro-optical device, manufacturing method for electro-optical device, and electronic apparatus

A liquid crystal device as an electro-optical device includes, an insulating layer including a first recess and a second recess that is provided continuously with the first recess and is deeper than the first recess, and a capacitance element including, a first capacitance electrode provided along a bottom surface of the second recess and a side wall of the second recess and provided along a bottom surface of the first recess, a capacitance insulating layer stacked on the first capacitance electrode, and a second capacitance electrode stacked on the capacitance insulating layer, wherein an upper surface of the second capacitance electrode at a position overlapping with the second recess, an upper surface of the first capacitance electrode at a position overlapping with the first recess, and a part of the capacitance insulating layer, are provided on the same surface as an upper surface of the insulating layer.

Electro-optical device and electronic apparatus

Included are: a semiconductor layer including a drain region, a channel region, and a second LDD region between the drain region and the channel region; a gate electrode disposed overlapping the channel region; a gate wiring line electrically coupled to the gate electrode; and a second light shielding portion disposed between the second LDD region and the gate wiring line and overlapping the second LDD region and the gate wiring line in plan view.

Electro-optical device and electronic device

A manufacturing method of a lens layer, including a first layer and a second layer for an electro-optical device, includes forming a first transmissive layer at a concave surface of an translucency insulating layer, forming, with a different material from the first transmissive layer, a first sacrificial layer on first transmissive layer, polishing its surface, to form a first layer being a residual portion of the first transmissive layer and a sacrificial layer residual portion being a residual portion of the first sacrificial layer, removing the sacrificial layer residual portion, forming a second transmissive layer at the first layer, forming, using a different material from the second transmissive layer, a second sacrificial layer on the second transmissive layer, and polishing the second transmissive layer and the second sacrificial layer to form a second layer from the second transmissive layer.

Manufacturing method for electro-optical device, electro-optical device, and electronic apparatus

An electro-optical device including a first substrate in which a plurality of pixel electrodes are provided, a second substrate in which a common electrode is provided, and an electro-optical layer disposed between the plurality of pixel electrodes and the common electrode, and having optical characteristics varying in accordance with an electric field, wherein the first substrate or the second substrate includes a base member having light-transmissivity and provided with a plurality of concave faces corresponding to the plurality of pixel electrodes, and a lens layer disposed to fill inner sides of the plurality of concave faces and having a refractive index different from that of the base member, and the base member includes a plurality of layers of which etching rates under a same etching condition differ from one another.

Method for manufacturing electro-optical device, electro-optical device, and electronic apparatus

A first electrode, a first insulating film, a second electrode, a second insulating film, and a pixel electrode are formed on a one surface side of a first substrate of an electro-optical device. The second electrode is electrically connected [to the first electrode] via a first contact hole that penetrates the first insulating film. The second electrode and the second insulating film configure a continuous flat surface, which is the surface on the opposite side to the first substrate, and the pixel electrode is electrically connected to the second electrode. Of the second insulating film, since an inside section positioned inside a concave portion caused by the first contact hole is connected to an outside section provided on the outside of the concave portion, peeling of the inside section is unlikely to occur.

On the first side substrate of an electro-optical device, a first maintenance capacitance is formed by a first capacitance electrode, a first dielectric layer, and a second capacitance electrode overlapped with each other on a bottom and an inner walls of a first recess section formed in an inter-layer insulation film. The inter-layer insulation film needs to be thick and thus an inter-layer insulation film needs to be thin. A first capacitance line is formed on a surface of the inter-layer insulation film on the side of a pixel electrode. Thus, the first capacitance line shields a section between a gate electrode and the second capacitance electrode to which a drain potential is applied.

Provided is an electro-optical device including a base material, a signal line, a scanning line, a pixel electrode, a transistor including a gate electrode, a source electrode, and a drain electrode, a first layer having an insulating property and arranged between the pixel electrode and the gate electrode, a second layer having an insulating property and arranged between the pixel electrode and the first layer, a third layer having an insulating property and arranged between the pixel electrode and the second layer, and a wiring including a first portion arranged between the second layer and the third layer and overlapping with the gate electrode in plan view from a thickness direction of the base material, and a second portion arranged closer to the first layer than the first portion and overlapping with an area between the gate electrode and the source electrode or the drain electrode in plan view.

A liquid crystal device serves as an electro-optical device and includes, on a base member of an element substrate, a first shield layer disposed between a gate electrode and a drain electrode of a TFT, and a second shield layer provided between the drain electrode and a data line serving as a signal line. A first holding capacitor is configured by part of the drain electrode, the first dielectric layer, and the second shield layer.

Electro-optical device, electrical apparatus

Disclosed an electro-optic device which includes a reflective pixel electrode which is formed on a base of a contact hole in an approximately rectangular shape or an approximately oval shape, and a side wall thereof, and a second insulating film which covers the reflective pixel electrode, and has a cavity in the contact hole, in which the film thickness of the reflective pixel electrode becomes large toward the upper part from the base of the contact hole.

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Chitose, Japan

Shotaro Izawa