Tokyo Electron Limited

Shota Yoshimura

Hiroto Ohtake

Shinya Morikita

Toshihisa Ozu

Fumiya Takata

Toshihisa Nozawa

Eiji Suzuki

Masaru Sasaki

Tetsuya Nishizuka

Kiyohito Ito

Takashi Tsukamoto

Kosuke Kariu

Tomiko Kamada

Jun Hashimoto

Kota Oikawa

An etching method includes: (a) providing a substrate including a first region containing silicon and nitrogen and a second region containing silicon and oxygen; (b) forming a tungsten-containing deposit on the first region using a first plasma generated from a first processing gas containing fluorine, tungsten, and at least one selected from a group consisting of carbon and hydrogen; and (c) after (b), etching the second region using a second plasma generated from a second processing gas different from the first processing gas.

Etching method and plasma processing apparatus

An etching method includes preparing a substrate including a first region containing a first material and a second region containing a second material different from the first material; and etching the second region with a plasma generated from a processing gas containing a tungsten-containing gas. In the etching, a flow rate of the tungsten-containing gas is the largest among all gases contained in the processing gas except for an inert gas.

There is provision of a processing method including a) depositing deposits on a patterned mask layer formed over an etching film; b) removing a part of the mask layer, a part of the deposits, or both the part of the mask layer and the part of the deposits; and c) repeating a) and b) at least once, thereby causing a taper angle of a side surface of a pattern formed in the mask layer to be a desired angle.

Processing method and substrate processing apparatus

In one embodiment of the present invention, there is provided a method for etching a multilayer film formed by laminating a plurality of alternating layers of a first layer having a first dielectric constant and a second layer having a second dielectric constant. This method includes (a) a multilayer film etching step, in which an etchant gas is supplied into a processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the etchant gas; and (b) a resist mask reducing step in which an oxygen-containing gas and a fluorocarbon-based gas are supplied to the processing chamber and a microwave is supplied into the processing chamber to excite a plasma of the oxygen-containing gas and the fluorocarbon-based gas. In this method, the steps (a) and (b) are alternately repeated.

Multilayer film etching method and plasma processing apparatus

A semiconductor device manufacturing method includes exciting a processing gas containing a HBr gas and a Clgas within a processing chamber that accommodates a target object including a substrate, regions made of silicon, which are protruded from the substrate and arranged to form a gap, a metal layer formed to cover the regions, a polycrystalline silicon layer formed on the metal layer, and an organic mask formed on the polycrystalline silicon layer. The Clgas is supplied at a flow rate of about 5% or more to about 10% or less with respect to a flow rate of the HBr gas in the processing gas.

Semiconductor device manufacturing method

There is provided a plasma etching apparatus provided for performing an etching in a desirable shape. The plasma etching apparatus includes a processing chamberfor performing a plasma process on a target substrate W; a gas supply unitfor supplying a plasma processing gas into the processing chamber; a supporting table positioned within the processing chamberand configured to support the target substrate thereon; a microwave generatorfor generating a microwave for plasma excitation; a plasma generation unit for generating plasma within the processing chamberby using the generated microwave; a pressure control unit for controlling a pressure within the processing chamber; a bias power supply unit for supplying AC bias power to the supporting table; and a control unit for controlling the AC bias power by alternately repeating supply and stop of the AC bias power.

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Miyagi, Japan

Shota Yoshimura